RQ1A070ZPTR Allicdata Electronics

RQ1A070ZPTR Discrete Semiconductor Products

Allicdata Part #:

RQ1A070ZPTR-ND

Manufacturer Part#:

RQ1A070ZPTR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET P-CH 12V 7A TSMT8
More Detail: P-Channel 12V 7A (Ta) 700mW (Ta) Surface Mount TSM...
DataSheet: RQ1A070ZPTR datasheetRQ1A070ZPTR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 1mA
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 700mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 6V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 12 mOhm @ 7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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The RQ1A070ZPTR MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is one of the most commonly used components in the field of electronics. It is used in a wide range of applications, from data processing and communications, to audio and video amplification. This type of MOSFET is one of the single-gate variety, meaning it is controlled by a single input gate voltage, as opposed to dual-gate designs which require two gates connected together.

The RQ1A070ZPTR is an insulated gate FET, meaning that the gate is insulated from the channel on the other side of the MOS capacitor. It is specially designed for use in high-frequency switchmode power applications. It can be used as an efficient switch to turn on and off power to an electronic system, or as a linear amplifier to control the current output.

The working principle of the RQ1A070ZPTR MOSFET is based on the semiconductor’s ability to act as a voltage controlled device. A positive voltage applied to the gate will cause a depletion region to form between the gate and the source of the MOSFET. This depletion region alters the conductivity of the device and makes it possible to control the current flowing through the MOSFET.

When a positive voltage is applied to the gate of the RQ1A070ZPTR, a current will flow through the source to the drain. This current is described as being proportional to the gate voltage applied to the MOSFET. This relationship between the gate voltage and the current is known as the transfer characteristic of the device and can be used to create circuits that require a certain level of current in order to perform a specific task. For example, by adjusting the gate voltage of the MOSFET, it is possible to produce an amplifier with a certain amount of gain.

In addition to being used as an amplifier, the RQ1A070ZPTR can also be used in a number of other applications. For example, it can be used as a switching device to provide power to an electronic system as well as a level shifter to provide a static voltage level to an electronic component. It can also be used in digital logic families as a logic gate, which is a component that performs a certain function based on the logic level inputs provided to it.

The RQ1A070ZPTR is a versatile component that is suited for a wide variety of applications in the field of electronics. It is a key component for switching, amplifying, and providing voltage level shifting, making it suitable for a variety of tasks. It can be used in a variety of combinations with other components to form the basis of many types of electronic circuits. In order to get the most out of this component, it is important to understand how it works and how it can best be used in order to achieve a desired result.

The specific data is subject to PDF, and the above content is for reference

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