RQ5E025ATTCL Discrete Semiconductor Products |
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Allicdata Part #: | RQ5E025ATTCLTR-ND |
Manufacturer Part#: |
RQ5E025ATTCL |
Price: | $ 0.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CHANNEL 30V 2.5A TSMT3 |
More Detail: | P-Channel 30V 2.5A (Ta) 1W (Tc) Surface Mount TSMT... |
DataSheet: | RQ5E025ATTCL Datasheet/PDF |
Quantity: | 9000 |
3000 +: | $ 0.08703 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 91 mOhm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 2.7nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 220pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 1W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TSMT3 |
Package / Case: | SC-96 |
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The RQ5E025ATTCL is a type of MOSFET, or metal-oxide-semiconductor field-effect transistor. It is a single device, meaning it has a single gate. It is a three-terminal device, meaning it has three connections: the source, the gate, and the drain. As its name implies, it is a field-effect transistor, meaning that its operation is based on a phenomenon known as the "field-effect" (more on this later).
MOSFETs are a popular type of transistor due to their low power consumption and their ability to operate at high frequencies. They are typically used in a range of applications, including power management, analogue signal processing, and digital logic circuits. However, they are especially well-suited to high-speed switching applications.
The RQ5E025ATTCL is a single-gate MOSFET. This type of MOSFET is designed to switch quickly when given a signal. Unlike other types of MOSFETs, the single-gate MOSFET is also able to amplify signals, making it a useful device for high-speed switching and amplifying applications. This type of MOSFET is often used for RF amplifiers, switching circuits, and power amplifiers.
The working principle behind the RQ5E025ATTCL is based on the "field-effect" phenomenon. This phenomenon is a characteristic of MOSFET transistors, in which the current flow between the source and drain, is controlled by the voltage across the gate. When a positive voltage is applied to the gate, it attracts electrons from the source, forming an inversion layer in the channel between the source and the drain. This creates a conductive path between the source and the drain, allowing current to flow. When a negative voltage is applied to the gate, this inversion layer is "repulsed", which blocks the current between the source and the drain. This allows the MOSFET to operate as a switch, turning current "on" and "off" depending on the applied voltage.
In summary, the RQ5E025ATTCL is a type of single-gate MOSFET, which is well-suited for high-speed switching and power amplifying applications. It operates on the "field-effect" principle, in which current between the source and drain is controlled by the voltage applied to the gate. This makes it a very useful device for amplifying and switching applications.
The specific data is subject to PDF, and the above content is for reference
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