RQ5E070BNTCL Discrete Semiconductor Products |
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Allicdata Part #: | RQ5E070BNTCLTR-ND |
Manufacturer Part#: |
RQ5E070BNTCL |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | NCH 30V 7A MIDDLE POWER MOSFET |
More Detail: | N-Channel 30V 7A (Tc) 1W (Tc) Surface Mount TSMT3 |
DataSheet: | RQ5E070BNTCL Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.17355 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | SC-96 |
Supplier Device Package: | TSMT3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 950pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 16.1 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The RQ5E070BNTCL is a single-gate MOSFET, a type of transistor used in electronic products and systems to control electric currents. It is a high-performance, low voltage n-channel enhancement mode MOSFET with an extremely low on-resistance of 0.07 ohms. This MOSFET has a low gate threshold voltage, which enables it to switch high-current loads quickly and efficiently, making it suitable for a wide range of applications.
- Low on-resistance of 0.07 ohms
- Low gate threshold voltage
- High current carrying capacity
- Low power consumption
- High frequency operation
The RQ5E070BNTCL is commonly used in a wide variety of applications such as audio amplifiers, switching power supplies, DC-DC converters, motor control, and robotics. It can also be used in switching applications as a replacement of its lower-efficiency bipolar counterparts. Its low on-resistance, high current carrying capacity, low power consumption, and high frequency operation make it ideal for a variety of uses.
The working principle of the RQ5E070BNTCL MOSFET is based on the principle of thermionic emission. When a voltage is applied to the gate, a current is induced in the MOSFET which causes electron and hole clouds to form at the surface. The electrons move towards the gate and the holes move away from the gate, causing the MOSFET to become "conductive" and allowing current to flow through the device.
The gate threshold voltage of the RQ5E070BNTCL is adjustable, allowing it to be switched on at different levels of voltage. This feature makes it suitable for a wide range of applications, from high power switching applications to low power digital control.
The RQ5E070BNTCL MOSFET is a high-performance, low-voltage n-channel enhancement-mode device. It has an extremely low on-resistance of 0.07 ohms, as well as a low gate threshold voltage. This MOSFET also has a high current carrying capacity and low power consumption, which make it suitable for a variety of applications. Its adjustable gate threshold voltage and high frequency operation also make it ideal for high power switching applications and low power digital control.
The specific data is subject to PDF, and the above content is for reference
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