RQ5E070BNTCL Allicdata Electronics

RQ5E070BNTCL Discrete Semiconductor Products

Allicdata Part #:

RQ5E070BNTCLTR-ND

Manufacturer Part#:

RQ5E070BNTCL

Price: $ 0.20
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: NCH 30V 7A MIDDLE POWER MOSFET
More Detail: N-Channel 30V 7A (Tc) 1W (Tc) Surface Mount TSMT3
DataSheet: RQ5E070BNTCL datasheetRQ5E070BNTCL Datasheet/PDF
Quantity: 1000
3000 +: $ 0.17355
Stock 1000Can Ship Immediately
$ 0.2
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: SC-96
Supplier Device Package: TSMT3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 16.1 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Introduction

The RQ5E070BNTCL is a single-gate MOSFET, a type of transistor used in electronic products and systems to control electric currents. It is a high-performance, low voltage n-channel enhancement mode MOSFET with an extremely low on-resistance of 0.07 ohms. This MOSFET has a low gate threshold voltage, which enables it to switch high-current loads quickly and efficiently, making it suitable for a wide range of applications.


Features and Benefits of RQ5E070BNTCL
  • Low on-resistance of 0.07 ohms
  • Low gate threshold voltage
  • High current carrying capacity
  • Low power consumption
  • High frequency operation

Applications of RQ5E070BNTCL

The RQ5E070BNTCL is commonly used in a wide variety of applications such as audio amplifiers, switching power supplies, DC-DC converters, motor control, and robotics. It can also be used in switching applications as a replacement of its lower-efficiency bipolar counterparts. Its low on-resistance, high current carrying capacity, low power consumption, and high frequency operation make it ideal for a variety of uses.


Working Principle of RQ5E070BNTCL

The working principle of the RQ5E070BNTCL MOSFET is based on the principle of thermionic emission. When a voltage is applied to the gate, a current is induced in the MOSFET which causes electron and hole clouds to form at the surface. The electrons move towards the gate and the holes move away from the gate, causing the MOSFET to become "conductive" and allowing current to flow through the device.

The gate threshold voltage of the RQ5E070BNTCL is adjustable, allowing it to be switched on at different levels of voltage. This feature makes it suitable for a wide range of applications, from high power switching applications to low power digital control.


Conclusion

The RQ5E070BNTCL MOSFET is a high-performance, low-voltage n-channel enhancement-mode device. It has an extremely low on-resistance of 0.07 ohms, as well as a low gate threshold voltage. This MOSFET also has a high current carrying capacity and low power consumption, which make it suitable for a variety of applications. Its adjustable gate threshold voltage and high frequency operation also make it ideal for high power switching applications and low power digital control.


The specific data is subject to PDF, and the above content is for reference

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