RQ5E035BNTCL Discrete Semiconductor Products |
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Allicdata Part #: | RQ5E035BNTCLTR-ND |
Manufacturer Part#: |
RQ5E035BNTCL |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 30V 3.5A TSMT |
More Detail: | N-Channel 30V 3.5A (Ta) 1W (Ta) Surface Mount TSMT... |
DataSheet: | RQ5E035BNTCL Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05361 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | SC-96 |
Supplier Device Package: | TSMT3 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 37 mOhm @ 3.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The RQ5E035BNTCL is a non-reflective, high-precision, dual-channel, high-speed monolithic amplifier designed specifically for high-speed data transmission and processing. It uses a JFET/MOSFET/Junction-FET pair that operates with a low level of drain-source current (less than 1 mA) and a Junction-FET amplifier with a high level of drain-source current (up to 100 mA). Its operating temperature range is -20°C to +125°C.
The RQ5E035BNTCL is classified as a single Mosfet and operates in a variety of fields. It can be used as a communication interface in industrial, Datacom/Telecom, automotive, and consumer electronics applications. As it is a monolithic amplifier, it is especially suited for use in multichannel, high speed, low power applications where signal integrity is important. It can also be used in high frequency systems such as fiber optic networks and broadcast video applications, where high signal-to-noise ratio and low power dissipation are important.
The working principle of the RQ5E035BNTCL is based on two commonly used principal circuits, the source-follower circuit and the emitter-follower circuit. The source-follower circuit is composed of a JFET as the input device and a MOSFET as the output device. Here, the MOSFET conducts when an electric signal is fed to the input, while the JFET provides the necessary bias voltage. This circuit is often used as a voltage amplifier and can be used to amplify high-frequency signals as well. The emitter-follower circuit, on the other hand, is composed of two transistors with one being connected as a diode to increase the voltage gain. The two transistors are used to control the current gain of the device. This circuit can be used to amplify both AC and DC signals with relatively low voltage gain.
The RQ5E035BNTCL is a highly reliable and efficient device designed specifically for high-speed data processing. With its high-precision and dual-channel performance, as well as its excellent noise immunity and low power consumption, the RQ5E035BNTCL is an ideal choice for a variety of applications. Its usage can be found in a variety of fields, including communications equipment, industrial sensors, automotive systems, and consumer electronics. With its reliable performance, the RQ5E035BNTCL is a valuable tool for the modern engineer to easily fulfill the most demanding requirements.
The specific data is subject to PDF, and the above content is for reference
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