RQ6C050UNTR Allicdata Electronics

RQ6C050UNTR Discrete Semiconductor Products

Allicdata Part #:

RQ6C050UNTR-ND

Manufacturer Part#:

RQ6C050UNTR

Price: $ 0.12
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 20V 5A TSMT
More Detail: N-Channel 20V 5A (Ta) 1.25W (Ta) Surface Mount TSM...
DataSheet: RQ6C050UNTR datasheetRQ6C050UNTR Datasheet/PDF
Quantity: 9000
3000 +: $ 0.11006
Stock 9000Can Ship Immediately
$ 0.12
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
FET Feature: --
Power Dissipation (Max): 1.25W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSMT6 (SC-95)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

RQ6C050UNTR is a kind of single-component n-channel metal-oxide semiconductor field-effect transistor (MOSFET). This device features high density cell design, very low on-resistance, fast dv/dt rate, and low gate charge. It is widely used in various applications to provide efficient and low-cost solutions.

Application Field of RQ6C050UNTR

RQ6C050UNTR is widely used in the automotive sector thanks to its high-density cell design and robust package. It provides great switching performance, making it suitable for use in applications such as ABS, traction control, powertrain, and electric power steering. It is also used in a variety of industrial applications as its low gate charge enables fast switching speeds and increased operational life. This makes it a suitable device for applications such as motor speed control, AD/ADC circuitry, motor drive, HVAC systems, and solar power inverters.

Working Principle of RQ6C050UNTR

RQ6C050UNTR is a unipolar transistor, meaning it has only one type of semiconductor material in its structure. It consists of a source terminal, a drain terminal and a gate terminal, with the gate controlling the flow of current from source to the drain. When negative voltage is applied to the gate terminal, the depletion region at the interface between the semiconductor material and the gate gets narrower and allows the current to flow through the MOSFET. When positive voltage is applied, the depletion region expands and prevents current from flowing through the MOSFET. This is called the "enhancement effect" of the MOSFET.

In addition to this, the RQ6C050UNTR is also known for its low on-resistance, which is the result of its high-density cell design. The high-density cell design ensures that the transistor has numerous small cells in its channel that provide more parallel connection between the source and the drain, hence reducing the on-resistance and making it suitable for low-voltage applications. The fast dv/dt rate of the transistor is also due to its high-density cell design, making it ideal for high-speed switching applications such as motor speed control.

RQ6C050UNTR is a great device for low-voltage and low-power applications, thanks to its low on-resistance, fast dv/dt rate, and low gate charge. It is capable of providing low-cost and efficient solutions for many applications, especially in the automotive and industrial sectors.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "RQ6C" Included word is 3
Part Number Manufacturer Price Quantity Description
RQ6C065BCTCR ROHM Semicon... 0.21 $ 1000 PCH -20V -6.5A MIDDLE POW...
RQ6C050BCTCR ROHM Semicon... 0.22 $ 1000 PCH -20V -5A MIDDLE POWER...
RQ6C050UNTR ROHM Semicon... 0.12 $ 9000 MOSFET N-CH 20V 5A TSMTN-...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics