RQ6C050UNTR Discrete Semiconductor Products |
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Allicdata Part #: | RQ6C050UNTR-ND |
Manufacturer Part#: |
RQ6C050UNTR |
Price: | $ 0.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 20V 5A TSMT |
More Detail: | N-Channel 20V 5A (Ta) 1.25W (Ta) Surface Mount TSM... |
DataSheet: | RQ6C050UNTR Datasheet/PDF |
Quantity: | 9000 |
3000 +: | $ 0.11006 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 4.5V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 1.25W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TSMT6 (SC-95) |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
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RQ6C050UNTR is a kind of single-component n-channel metal-oxide semiconductor field-effect transistor (MOSFET). This device features high density cell design, very low on-resistance, fast dv/dt rate, and low gate charge. It is widely used in various applications to provide efficient and low-cost solutions.
Application Field of RQ6C050UNTR
RQ6C050UNTR is widely used in the automotive sector thanks to its high-density cell design and robust package. It provides great switching performance, making it suitable for use in applications such as ABS, traction control, powertrain, and electric power steering. It is also used in a variety of industrial applications as its low gate charge enables fast switching speeds and increased operational life. This makes it a suitable device for applications such as motor speed control, AD/ADC circuitry, motor drive, HVAC systems, and solar power inverters.
Working Principle of RQ6C050UNTR
RQ6C050UNTR is a unipolar transistor, meaning it has only one type of semiconductor material in its structure. It consists of a source terminal, a drain terminal and a gate terminal, with the gate controlling the flow of current from source to the drain. When negative voltage is applied to the gate terminal, the depletion region at the interface between the semiconductor material and the gate gets narrower and allows the current to flow through the MOSFET. When positive voltage is applied, the depletion region expands and prevents current from flowing through the MOSFET. This is called the "enhancement effect" of the MOSFET.
In addition to this, the RQ6C050UNTR is also known for its low on-resistance, which is the result of its high-density cell design. The high-density cell design ensures that the transistor has numerous small cells in its channel that provide more parallel connection between the source and the drain, hence reducing the on-resistance and making it suitable for low-voltage applications. The fast dv/dt rate of the transistor is also due to its high-density cell design, making it ideal for high-speed switching applications such as motor speed control.
RQ6C050UNTR is a great device for low-voltage and low-power applications, thanks to its low on-resistance, fast dv/dt rate, and low gate charge. It is capable of providing low-cost and efficient solutions for many applications, especially in the automotive and industrial sectors.
The specific data is subject to PDF, and the above content is for reference
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