RQ6C065BCTCR Discrete Semiconductor Products |
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Allicdata Part #: | RQ6C065BCTCRTR-ND |
Manufacturer Part#: |
RQ6C065BCTCR |
Price: | $ 0.21 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | PCH -20V -6.5A MIDDLE POWER MOSF |
More Detail: | P-Channel 20V 6.5A (Tc) 1.25W (Tc) Surface Mount T... |
DataSheet: | RQ6C065BCTCR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.18595 |
Vgs(th) (Max) @ Id: | 1.2V @ 1mA |
Package / Case: | SC-95-6 |
Supplier Device Package: | TSMT6 (SC-95) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1520pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 21 mOhm @ 6.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 6.5A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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RQ6C065BCTCR Application Field and Working Principle
The RQ6C065BCTCR is a High Voltage N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by Rohm Semiconductor. It is a single-gate field effect transistor, which allows it to be used in a variety of applications, from low voltage switching to high voltage rectifiers and other power applications up to 6500V.
Application of RQ6C065BCTCR
The RQ6C065BCTCR is used in a variety of applications, including:
- High Power DC Motor Drivers
- Lighting Controls
- Transportation Systems
- Electronic ballasts
- Circuit Breakers
The high voltage, low gate charge, low on-resistance, and low input capacitance of the RQ6C065BCTCR make it well suited for power-saving applications, such as automotive lighting controls and motor drives, as well as transformerless AC/DC converters.
Working Principle of RQ6C065BCTCR
The operation of the RQ6C065BCTCR is based on the depletion mode MOSFET principle. In this type of transistor, a negative voltage is applied to the gate in order to turn on or off a MOSFET. When the negative voltage is applied to the gate, the current flow through the transistor is restricted. When the negative voltage is removed, the current flow through the transistor is allowed.
The RQ6C065BCTCR has a Drain-Source voltage rating of 6500V and a Drain-Source current rating of 65A. The on resistance of the transistor is 6.5 mOhm, with a 0.075 Ohm static on-resistance at an operating voltage of 6500V. The gate charge of the RQ6C065BCTCR is 5nC.
Benefits of RQ6C065BCTCR
The major benefits of the RQ6C065BCTCR are the high voltage rating, the low gate charge and low on-resistance, and the low input capacitance. These features make the device well suited for applications with high electrical loads. It can also be used in power-saving applications due to its low power consumption.
In addition, the RQ6C065BCTCR is highly reliable and has a long operating life. The device is also resistant to high temperatures, up to 150°C, and can be used in a wide range of operating temperatures.
Conclusion
RQ6C065BCTCR is a high voltage N-Channel MOSFET that is used in a variety of applications. It has a wide voltage range, a low on-resistance, a low gate charge, and a low input capacitance. These features make the device well suited for power-saving applications, as well as for applications in harsh environments where reliability is a must. The device is highly reliable and has a long operating life.
The specific data is subject to PDF, and the above content is for reference
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