RQ6E050ATTCR Allicdata Electronics

RQ6E050ATTCR Discrete Semiconductor Products

Allicdata Part #:

RQ6E050ATTCRTR-ND

Manufacturer Part#:

RQ6E050ATTCR

Price: $ 0.14
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET P-CH 30V 5A TSMT
More Detail: P-Channel 30V 5A (Ta) 1.25W (Ta) Surface Mount TSM...
DataSheet: RQ6E050ATTCR datasheetRQ6E050ATTCR Datasheet/PDF
Quantity: 6000
3000 +: $ 0.12577
Stock 6000Can Ship Immediately
$ 0.14
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSMT6 (SC-95)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 27 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The RQ6E050ATTCR is a surface mount, N-channel, depletion-mode Mosfettransistor, commonly used for general purpose switching and amplification. This device is capable of supplying 25A of continuous drain current, at a drain-source voltage of 50V. It comes in a TO-263 package, which is both compact and cost-effective. This device is often used in circuit boards requiring both high-current and high-voltage capabilities. In terms of its structure, the RQ6E050ATTCR has four distinct functional regions: the source, the drain, the gate, and the body. The source and the drain are terminals by which current can enter and leave the device, while the gate is the terminal at which the controlling voltage is applied. It is this voltage between the gate and the source terminals which modulates the current flow between the source and the drain. In the ON state, the RQ6E050ATTCR is capable of supplying a large amount of current without experiencing any significant voltage drop, due to its low internal parasitic resistance. This makes it ideal for applications such as battery chargers, where a large amount of current needs to be supplied for a prolonged period of time without experiencing a significant voltage drop. In addition, the device is able to supply a current without any additional gate charge, meaning that it can be used in circuits where low gate charging power is demanded. The RQ6E050ATTCR is also a depletion-mode Mosfet. This means that there is no need for an external bias voltage to switch the device into its ON state, making it especially suited for applications in circuits where external biasing is not possible. For example, it can be used as a switching element in low-voltage, battery-powered devices, allowing them to be operated in a power-saving mode. In terms of its practical application, the RQ6E050ATTCR is most often used as a switch in circuits requiring high current and high voltage. It is also used as an amplifier, particularly in circuits which require a high level of accuracy and low noise. In addition, it is widely used in power supply circuits, where it is capable of supplying large amounts of current without any build-up of heat. To sum up, the RQ6E050ATTCR is a surface mount, N-channel, depletion-mode Mosfet transistor. It is capable of supplying 25A of continuous drain current and is often used in circuits requiring both high-current and high-voltage capabilities. It is also used as an amplifier, particularly in circuits which require a high level of accuracy and low noise. It is commonly used in battery-powered applications, due to its ability to switch without any external bias and its low gate charging power. Finally, it is used in power supply circuits, where it is capable of supplying large amounts of current without any build-up of heat.

The specific data is subject to PDF, and the above content is for reference

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