RQ6E085BNTCR Discrete Semiconductor Products |
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Allicdata Part #: | RQ6E085BNTCRTR-ND |
Manufacturer Part#: |
RQ6E085BNTCR |
Price: | $ 0.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | NCH 30V 8.5A MIDDLE POWER MOSFET |
More Detail: | N-Channel 30V 8.5A (Tc) 1.25W (Tc) Surface Mount S... |
DataSheet: | RQ6E085BNTCR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.24162 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 8.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 14.4 mOhm @ 8.5A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 32.7nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1350pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 1.25W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-457 |
Package / Case: | SC-74, SOT-457 |
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The RQ6E085BNTCR is a type of Field Effect Transistor (FET) specifically designed to buff, amplify and switch digital and analog signals. It is also known as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). This type of transistor, first developed in the early 1960s, is part of the larger class of FET transistors which can be used for a range of applications; from small signal amplification, power switching, and audio mixing. The RQ6E085BNTCR is a particular type of single type FET; it is a N-type MOSFET transistor (as opposed to a P-type MOSFET) and is generally used for voltage-controlled signal buffering, amplification, and switching of low-frequency signals. It is an enhancement-type transistor, which makes it particularly useful for signal buffering, as the signal gain can be increased without causing an increase in signal noise. The signal buffering process begins when a small current signal is passed through the transistor’s Control Gate. This small current creates an electric field which influences the flow of electrons between the drain and source terminals of the transistor. When the electric field strength is increased, the electrons flow more easily between the drain and source terminals, which increases the current output of the transistor and amplifies the signal. This amplification process occurs regardless of the frequency of the signal input; the transistor can be use for both DC and AC signals. In addition to signal buffering, the RQ6E085BNTCR can also be used for power switching applications. This is accomplished by applying a voltage signal to the transistor’s control gate. This voltage signal creates an electric field which forces the electrons to move from the drain to the source terminals. This in turn switches on the transistor and allows current to flow through the transistor and into the load. This process is used to turn electrical appliances on and off, control the current in motors, and switch devices into different modes. The RQ6E085BNTCR is a versatile and reliable transistor which is widely used in a range of applications. It is especially useful for signal buffering and power switching applications, and its ability to handle both DC and AC signals makes it particularly desirable. It is also relatively inexpensive and powerful, making it an attractive option for many applications.
The specific data is subject to PDF, and the above content is for reference
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