RQ6E055BNTCR Discrete Semiconductor Products |
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Allicdata Part #: | RQ6E055BNTCRTR-ND |
Manufacturer Part#: |
RQ6E055BNTCR |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 30V 5.5A TSMT |
More Detail: | N-Channel 30V 5.5A (Ta) 1.25W (Ta) Surface Mount T... |
DataSheet: | RQ6E055BNTCR Datasheet/PDF |
Quantity: | 3000 |
1 +: | 0.18000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
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The RQ6E055BNTCR is a P-Channel enhancement-mode power MOSFET with a MOS gate structure specifically designed for high-speed switching applications. It is manufactured using the latest advanced technology and processes, making it one of the finest products available on the market today. This device is known for its excellent performance and reliability, making it the go-to choice among engineers for various power switching and conversion applications.
The RQ6E055BNTCR is a transistor with an n-type source and drain and a p-type substrate. This type of transistor, known as an enhancement-mode power MOSFET, works by being triggered on or off depending on the applied voltage to the gate. When the gate is not being triggered, the device acts as an electrical insulator, blocking any current between the source and the drain. However, when a voltage is applied to the gate, the insulating barrier is reduced and the source and drain become conductive, allowing current to flow. This type of transistor is useful for controlling and switching large amounts of power without the need for a large number of components.
The RQ6E055BNTCR is suitable for use in many different kinds of applications, such as DC motor control, solid-state relays, power converters, power supplies, and switching applications. It’s a very versatile device that can be used in many different kinds of circuits. Additionally, due to the low on-resistance and the high input impedance, the RQ6E055BNTCR is able to switch high currents with relatively low power losses. This makes it a great choice for use in energy-efficient circuits. Thanks to its robust construction and excellent dynamic performance, the RQ6E055BNTCR is capable of handling a wide range of voltages and currents.
The RQ6E055BNTCR offers excellent protection against gate voltage surge, gate protection, and high temperature operation. Additionally, it is also environmentally friendly and RoHS compliant. Furthermore, the RQ6E055BNTCR has a very low gate capacitance, enabling it to operate at much higher speeds than other similar components. This makes it a great choice for applications where fast switching was once thought impossible. Finally, the RQ6E055BNTCR is an economical solution, as it requires fewer components than other more complex MOSFETs.
In conclusion, the RQ6E055BNTCR is a versatile device that can be used for many different types of power switching and conversion applications. It offers excellent protection, fast switching capability, and low power loss. Additionally, it is environmentally friendly and RoHS compliant. Thanks to its robust construction and outstanding performance, the RQ6E055BNTCR is an excellent choice for engineers looking to build reliable, efficient, and cost-effective components.
The specific data is subject to PDF, and the above content is for reference
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