RRS100P03TB1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Not For New Designs
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	10A (Ta)
Rds On (Max) @ Id, Vgs:	--
Vgs(th) (Max) @ Id:	--
FET Feature:	--
Power Dissipation (Max):	--
Operating Temperature:	--
Mounting Type:	Surface Mount
Supplier Device Package:	8-SOP
Package / Case:	8-SOIC (0.154", 3.90mm Width)

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RRS100P03TB1 Application Field and Working Principle

The RRS100P03TB1 is a n-channel enhancement mode power MOSFET, built with high-density cell and super-junction structure. It is perfectly suitable for off-line SMPS, DC/DC converters, motor drivers and other power management applications. It also supports low switching loss and EMI/EMC compliance. The RRS100P03TB1 achieves low on-state resistance (RDS (on)) by using the advanced super-junction technology, and its drain-source breakdown voltage is 100V.The working principle of RRS100P03TB1 is: when the Gate of the MOS transistor receives an input voltage, the threshhold voltage must be exceeded in order for the current to flow from the source to the drain. As the voltage at the Gate rises above the threshhold level, the current from drain to source increases. Thus, there is an amplifier factor between the voltage at the Gate and the current flowing through the MOS transistor.The RRS100P03TB1 has many advantages, such as: minimal switching and conduction losses due to low on-state resistance when properly driven; negligible reverse transfer capacitance; improved immunity to noise thanks to its low input capacitor; extremely low threshold voltage; better temperature stability.In addition, RRS100P03TB1 has characteristics such as high forward blocking voltage, extremely low gate charge and high power and energy efficiency. To ensure low power losses during normal operation, low on-state resistance is a key factor. The improved body diode speed and low reverse transfer capacitance helps to reduce switching losses.RRS100P03TB1 is ideal for use in high-voltage, high-frequency dc-dc converters, power factor correction (PFC) circuits, AC-DC converters and motor drives. These applications require a low on-state resistance, high-energy efficiency and reduced diode switching noise.To summarize, RRS100P03TB1 is an enhancement mode power MOSFETs, which is ideal for use in off-line SMPS, DC/DC converters, motor drivers and other power management applications. It has high forward blocking voltage, extremely low gate charge and high power and energy efficiency, low on-state resistance, improved body diode speed and low reverse transfer capacitance, minimal switching and conduction losses due to low on-state resistance when properly driven, negligible reverse transfer capacitance, extremely low threshold voltage. With the advanced super-junction technology, it can achieve low on-state resistance and its drain-source breakdown voltage is 100V.

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