RRS130N03TB1 Discrete Semiconductor Products

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The RRS130N03TB1 is a type of Voltage Controlled FET, also referred to as a “V-FET”. It is a three terminal device in which the length of the channel between the source and the drain is determined by the bias voltage applied to the gate. The RRS130N03TB1 Transistor is capable of functioning as a switch, amplifier, rectifier, regulator, or even a multiplier, depending on how it is used and connected with other electronic components and circuits.

The RRS130N03TB1 Voltage Controlled FET series feature a wide range of package styles and their various performance-related characteristics, enabling designers to carefully select the component that best suits the application and design goals. RRS130N03TB1 types of transistors come in a variety of packages, such as the TO-220AC, SOT-223, SMT-77, MT-5231, and various TO-39 type packages.

Application field

The RRS130N03TB1 FETs are suitable for switching, amplification and signal rectification for general purpose applications such as automotive, power supply and telecom. The FET function as you would expect from a normal transistor requiring only a small gate bias voltage, typically the device is turned on from zero to just over 3V.

When used as an amplifier, this FET can achieve high voltage gain, which is ideal for audio and video applications. FETs are also capacitance sensitive, meaning that their performance changes as the capacitance of the gate-drain junction changes. This makes them ideal for use in AC or DC circuits with high capacitance, or for DC circuits where the capacitance needs to be adjusted to improve the performance of the FET.

The RRS130N03TB1 series can also be used in other applications where the device capacitance is important such as in PWM (- Pulse Width Modulated) applications with high frequency switching, where a low input capacitance FET will improve performance across a range of frequencies.

Working Principle

The RRS130N03TB1 FET works on the principle of controlling the flow of electric current between the source and the drain terminals by applying a voltage to the gate. A voltage applied at the gate terminal of the FET changes the electric field in the semiconductor channel between the source and the drain terminals, thus varying the channel resistivity. The channel resistivity is lowest when the voltage at the gate is zero and increases with increasing gate voltage up to a threshold voltage. Above this threshold voltage, the channel resistance is high and the FET is turned off.

By controlling the source and gate voltage, it is possible to draw current from the drain terminal and hence this FET can be used for switching, amplification and signal rectification. The RRS130N03TB1 devices to feature a wide range of package styles with different performance characteristics, enabling designers to carefully select the component that best suits the application and design goals.

Various performance-related characteristics include, for example, the maximum drain to source voltage, maximum drain current, operating temperature range, gate capacitance, and breakdown voltage. With the RRS130N03TB1 series, designers can achieve improved reliability and greater efficiency with reduced EMI as well as lower power consumption. In addition, user-friendly graphical and simulation applications allow designers to quickly and easily create and test designs.

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