RRS125N03TB1 Discrete Semiconductor Products |
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Allicdata Part #: | RRS125N03TB1TR-ND |
Manufacturer Part#: |
RRS125N03TB1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 30V 12.5A 8-SOIC |
More Detail: | N-Channel 30V 12.5A (Ta) Surface Mount 8-SOP |
DataSheet: | RRS125N03TB1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 12.5A (Ta) |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 12.5A, 10V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 40.5nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds: | 2300pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOP |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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The RRS125N03TB1 is a single N-channel power MOSFET. It is a type of transistor which uses electrons, rather than holes, to carry electric current. The MOSFET is used to control electrical power and voltage. It is a switch or amplifier, allowing or stopping current to flow in a circuit.
The RRS125N03TB1 uses a metal oxide silicon field effect transistor (MOSFET) structure to make it highly efficient. The device is often used in areas of power management and switching applications such as electric motor control, lighting control, and switching applications.
The RRS125N03TB1 has a built-in design that ensures low on-resistance and low gate charge. This helps to provide low power consumption and improved efficiency. The device also features an optimized gate design that provides good immunity to electro-static discharge.
The RRS125N03TB1 is typically used for low-voltage applications that require high speed switching. The device has a higher current rating than its contemporaries and can be used in a variety of applications including motor control, power supply design, and the automotive industry.
This device has several advantages over other types of transistors. The most obvious advantage is its ability to handle higher currents. It is also more efficient and has a faster switching speed. The device also has a higher power-to-weight ratio than other types of transistors.
The RRS125N03TB1 uses a metal oxide based gate in order to control the switch. The transistors gate voltage is set to a specific voltage and the transistor will then remain in the "on" state until the voltage is changed. The current will then be controlled by the voltage on the gate.
Additionally, the RRS125N03TB1 is very efficient in terms of power management. It has a low thermal resistivity, meaning it can operate at high temperatures without losing efficiency. The device also has a low input capacitance, making it suitable for use in applications that require fast switching times. The device also has a low gate voltage, meaning it can be used in low voltage areas.
Overall, the RRS125N03TB1 is a powerful, efficient and reliable power MOSFET that can handle high current loads and switching speeds. The device is suitable for a variety of applications including motor control, power supply design and the automotive industry. The device is also designed to provide low on-resistance, low gate charge and good electro-static discharge immunity.
The specific data is subject to PDF, and the above content is for reference
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