Allicdata Part #: | RS1DLHRQG-ND |
Manufacturer Part#: |
RS1DLHRQG |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 200V 800MA SUBSMA |
More Detail: | Diode Standard 200V 800mA Surface Mount Sub SMA |
DataSheet: | RS1DLHRQG Datasheet/PDF |
Quantity: | 1000 |
20000 +: | $ 0.03262 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 800mA |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 800mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes form a part of electronics as a type of two- terminal passive component that allows current to flow in one direction. Rectifier diodes are specialized diodes that are used in AC devices to convert AC current into DC current. RS1DLHRQS is a type of single rectifier diode that has a range of important applications and advantages over other types of rectifier diodes.
The RS1DLHRQG is a rectifier diode that utilizes a unique construction allowing it to have higher efficiency than other rectifier diodes. It is made up of two parts: a high speed diode and a trench gate structure MOSFET. The diode allows high speed switching and the MOSFET enables low forward voltage drop and low reverse recovery charge. The combination of these two components allows the RS1DLHRQG to provide greater efficiency, higher power conversion, and a wider temperature range than other rectifier diodes.
The RS1DLHRQG is used in a variety of applications, including power supplies, inverters, motor controllers, DC-AC converters, AC-AC converters, and automotive power systems. It is especially suited for use in high frequency switching applications due to its high speed, low forward voltage drop, and low reverse recovery charge. Additionally, it is suitable for use in power circuits with high di/dt, as its structure and materials can provide fast response time and improved reliability. The high speed and low forward voltage drop of the RS1DLHRQG also makes it ideal for use in high-intensity discharge (HID) applications.
The working principle of the RS1DLHRQG is rooted in its construction. When the cathode of the diode is connected to the positive terminal of the power supply, the joule effect of the diode ensures low power loss and high efficiency of the power conversion. The fast response time of the MOSFET ensures fast recovery times of the power control circuit, while its insulation provides stability and reliability in the power systems. The combination of the diode and the MOSFET in the RS1DLHRQG has improved the performance of many power applications.
In summary, the RS1DLHRQG is a type of single rectifier diode that has a range of important applications and advantages over other types of rectifier diodes. Its unique construction allows it to have higher efficiency than other rectifier diodes, making it well-suited for use in a variety of applications, from power supplies to HID applications. Its working principle is based on the combination of a high speed diode and a MOSFET structure, which allow it to provide fast response times, low forward voltage drop, and low reverse recovery charge. All of these qualities make the RS1DLHRQG a valuable component in many power applications.
The specific data is subject to PDF, and the above content is for reference
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