
Allicdata Part #: | RS1DLHRTG-ND |
Manufacturer Part#: |
RS1DLHRTG |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 200V 800MA SUBSMA |
More Detail: | Diode Standard 200V 800mA Surface Mount Sub SMA |
DataSheet: | ![]() |
Quantity: | 1000 |
15000 +: | $ 0.03093 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 800mA |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 800mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The RS1DLHRTG is a single rectifier diode, which is specifically designed for high-frequency rectification applications in the consumer, medical and computing fields. The device features low on state forward voltage (VF) at high frequency, high reverse voltage (VR) and low reverse leakage current (IR). It is also suitable for use in audio applications as it has a low power dissipation (PD) and is optimized for low-noise operation.
The RS1DLHRTG has a reverse recovery time (trr) of 7ns, which is ideal for high-speed switching applications. It also has very low power losses due to its low VF and low PD. The device has a surge current rating of 10A and a maximum operating junction temperature of 125°C.
The RS1DLHRTG is suitable for applications such as SMPS, converters, voltage regulators, power factor correction, and lighting systems. In addition, it can be used for audio and automotive applications. The device is capable of operation at frequencies up to 1MHz, making it ideal for high-speed switching applications.
The RS1DLHRTG\'s working principle is based on the thermionic emission of electrons from a hot surface, a process known as thermionic emission. When a diode is forward biased and a voltage is applied across its terminals, electrons move towards the anode (positive terminal). This causes a current to flow through the diode, allowing it to conduct current in the forward direction. At the same time, a certain amount of electron emission takes place at the anode, producing what is known as a "space charge" at the junction. This space charge, combined with the applied electric field in the semiconductor region, restricts the movement of further electrons, preventing an excessive increase in the current.
In reverse bias, the current is predominantly due to the diffusion of mobile holes and electrons, which are of minority carrier type. This current can be modulated by the battery voltage, thus enabling the diode to act as a rectifier. The RS1DLHRTG also has a low forward voltage drop and low power dissipation, making it ideal for applications where high efficiency is required.
The RS1DLHRTG can also be used as a clamping diode, protecting sensitive equipment from voltage spikes or excessive current. Clamping diodes work by disconnecting the device from the power source when the voltage exceeds a certain level, preventing damage caused by the surge.
The RS1DLHRTG is an ideal choice for high-frequency rectification applications, as it is specifically designed for the purpose. It offers superior performance, high speed, and low power losses, making it the perfect choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
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RS1DLHRTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
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RS1DLHRUG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1DLHRHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1DL RUG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1DLHRFG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1D | ON Semicondu... | -- | 7500 | DIODE GEN PURP 200V 1A SM... |
RS1DB-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 200V 1A SM... |
RS1D-M3/5AT | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
RS1DFS MWG | Taiwan Semic... | 0.05 $ | 7000 | DIODEDiode Standard 200V ... |
RS1D-13-F | Diodes Incor... | -- | 1000 | DIODE GEN PURP 200V 1A SM... |
RS1DHE3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
RS1DLHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1DLHRQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1D-E3/5AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
RS1DHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
RS1DFA | ON Semicondu... | 0.06 $ | 1000 | DIODE GP 200V 800MA SOD12... |
RS1DL RQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1DTR | SMC Diode So... | 0.01 $ | 1000 | DIODE GEN PURP 200V 1A SM... |
RS1DL M2G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1D-M3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
RS1DHE3_A/I | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
RS1DL RTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1DB-13-F | Diodes Incor... | -- | 30000 | DIODE GEN PURP 200V 1A SM... |
RS1DLW RVG | Taiwan Semic... | 0.04 $ | 3000 | DIODE GEN PURP 200V 1A SO... |
RS1DL RFG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1D M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
RS1DL MTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1DLHM2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
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RS1DLHMTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
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RS1DHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
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