
RS1DL MTG Discrete Semiconductor Products |
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Allicdata Part #: | RS1DLMTG-ND |
Manufacturer Part#: |
RS1DL MTG |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 200V 800MA SUBSMA |
More Detail: | Diode Standard 200V 800mA Surface Mount Sub SMA |
DataSheet: | ![]() |
Quantity: | 1000 |
15000 +: | $ 0.02812 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 800mA |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 800mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes - Rectifiers - Single
RS1DL MTG (modified transition gate) is a throw-mode uni-directional silicon controlled rectifier (SCR) specifically designed for use in applications such as ultrasensitive resistive loads, low impedance inductive loads and AC motor control. The unique gate structure allows it to be triggered by gate currents that are orders of magnitude lower than traditional SCR gate drive requirements. This makes it a viable option in applications where gate triggering needs to be done at a distance.
The RS1DL is a 4-terminal semiconductor device which consists of a normal PN junction diode and the equivalent of two N-type semiconductor layers, with a modified transition gate between them. The anode and the modified transition gate share one of the semiconductor layers, while the cathode and the modified transition gate share the other. The addition of the modified transition gate in between the anode and cathode generates a region between them with various areas generating electron-hole pairs upon the application of an electric field.
The functional characteristics of the RS1DL are similar to those of an SCR, but with the added advantage of much lower trigger currents and longer life. The single diode operation mode allows the RS1DL to be used in multiple power systems. When used in AC circuits, the diode has very little voltage drop and is transparent to the flow of current, thereby providing negligible power loss. RS1DLs are also used in a wide range of AC and DC circuits and are capable of switching alternating current drawn from AC/DC sources and provide solid-state protection against inrush current and over-voltage surges.
RS1DLs utilize a trigger gate to control the gate voltage, which is responsible for the operation of the device. When a current is applied to the gate, it send an electron through the gate structure and into the layer of the anode and modified gate, which in turn causes the N-type layer to become conductive. This increases the conductivity of the diode and allows current to flow from the anode to the cathode. Thus, the device is triggered into a low resistance state and conducts current from the anode to the cathode.
The RS1DL device also features a shut off voltage of up to 8V, allowing for fast switching with a wide operating voltage range. Its low on-state voltage drop of 0.4V ensures very low conduction losses, making it suitable for use in regulating power quality. Additionally, the device has a unique two-layer structure, which allows it to be used in applications involving high ambient temperatures. The breakdown voltage of the RS1DL is also relatively low, providing a short recovery time and increased safety.
In summary, the RS1DL MTG offers a unique combination of robustness, low leakage current, low operating voltage, low power consumption and low triggering thresholds, making it the perfect choice for a wide range of applications, ranging from general switch control to protective relaying and motor control.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
RS1DL MQG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1DLHRTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1D/1 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
RS1DLHRUG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1DLHRHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1DL RUG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1DLHRFG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1D | ON Semicondu... | -- | 7500 | DIODE GEN PURP 200V 1A SM... |
RS1DB-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 200V 1A SM... |
RS1D-M3/5AT | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
RS1DFS MWG | Taiwan Semic... | 0.05 $ | 7000 | DIODEDiode Standard 200V ... |
RS1D-13-F | Diodes Incor... | -- | 1000 | DIODE GEN PURP 200V 1A SM... |
RS1DHE3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
RS1DLHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1DLHRQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1D-E3/5AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
RS1DHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
RS1DFA | ON Semicondu... | 0.06 $ | 1000 | DIODE GP 200V 800MA SOD12... |
RS1DL RQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1DTR | SMC Diode So... | 0.01 $ | 1000 | DIODE GEN PURP 200V 1A SM... |
RS1DL M2G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1D-M3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
RS1DHE3_A/I | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
RS1DL RTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1DB-13-F | Diodes Incor... | -- | 30000 | DIODE GEN PURP 200V 1A SM... |
RS1DLW RVG | Taiwan Semic... | 0.04 $ | 3000 | DIODE GEN PURP 200V 1A SO... |
RS1DL RFG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1D M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
RS1DL MTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1DLHM2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1DLHMHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1DFSHMXG | Taiwan Semic... | 0.04 $ | 1000 | DIODE, FAST, 1A, 200VDiod... |
RS1D-E3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
RS1DL RHG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1DL RVG | Taiwan Semic... | 0.04 $ | 6000 | DIODE GEN PURP 200V 800MA... |
RS1DLHMTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1DLWHRVG | Taiwan Semic... | 0.05 $ | 3000 | DIODE GEN PURP 200V 1A SO... |
RS1DFSHMWG | Taiwan Semic... | 0.05 $ | 7000 | DIODEDiode Standard 200V ... |
RS1D-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A SM... |
RS1DHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
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