Allicdata Part #: | RS1DLHRUG-ND |
Manufacturer Part#: |
RS1DLHRUG |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 200V 800MA SUBSMA |
More Detail: | Diode Standard 200V 800mA Surface Mount Sub SMA |
DataSheet: | RS1DLHRUG Datasheet/PDF |
Quantity: | 1000 |
21600 +: | $ 0.03093 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 800mA |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 800mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
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A rectifying Schottky diode, or RS1DLHRUG, is a semiconductor diode based on the Schottky barrier. It is specifically designed for use in high voltage systems, as well as for rectification of signals with RF content. A rectifying Schottky diode has two key characteristics: rectification (allowing AC to be converted to DC) and reverse blocking. It is commonly used in power supplies, in power converters, for high frequency rectification, and in a variety of switching applications.
A rectifying Schottky diode (RS1DLHRUG) is made up of two layers: an anode and a cathode. The anode is typically a metal or a heavily doped semiconductor, and the cathode is typically a lightly doped semiconductor. When a voltage is applied to the anode, it attracts electrons from the cathode, developing a depletion region in the junction. In this region, no electrons are present, and thus, no current can flow. When the voltage is reversed, current can flow in the opposite direction, resulting in a rectifying diode.
The key advantage of a rectifying Schottky diode is its low forward voltage drop. The forward voltage drop is the potential difference across the diode when current is allowed to pass through it. In contrast to conventional rectifier diodes, a rectifying Schottky diode has a very low forward voltage drop, typically around 0.2–0.3 V. This low voltage drop improves the efficiency of power conversion, as the forward voltage drop represents the energy wasted in the conversion process. In addition, the low forward voltage drop means that the diode can handle large input signals without causing excessive heat.
The reverse blocking capability of a rectifying Schottky diode is another key advantage. Reverse blocking refers to the ability of a diode to prevent reverse current flow when a reverse voltage is applied. This is important in applications where the prevention of reverse current flow is key, such as in power supplies, motor drive circuits, and power converters.
A rectifying Schottky diode is also characterized by high switching speeds. The high switching speed, coupled with the low forward voltage drop, make a rectifying Schottky diode particularly suitable for use in high-frequency switching applications, such as RF switches and high power converters. The high switching speed also makes rectifying Schottky diodes appropriate for applications where the device must be switched on and off multiple times in a short time window.
In summary, a rectifying Schottky diode (RS1DLHRUG) is a semiconductor diode based on the Schottky barrier and is specifically designed for use in high-voltage systems and for rectification of signals with RF content. It is characterized by its low forward voltage drop, its ability to block reverse current flow, and its high switching speed. These characteristics make it particularly suitable for power conversion, high frequency rectification, and a variety of switching applications.
The specific data is subject to PDF, and the above content is for reference
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