RSD200N05TL Discrete Semiconductor Products |
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| Allicdata Part #: | RSD200N05TLTR-ND |
| Manufacturer Part#: |
RSD200N05TL |
| Price: | $ 0.29 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET N-CH 45V 20A CPT3 |
| More Detail: | N-Channel 45V 20A (Ta) 20W (Tc) Surface Mount CPT3 |
| DataSheet: |  RSD200N05TL Datasheet/PDF |
| Quantity: | 2500 |
| 2500 +: | $ 0.27183 |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | CPT3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 20W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 950pF @ 10V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 28 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
| Drain to Source Voltage (Vdss): | 45V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Tape & Reel (TR) |
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RSD200N05TL is a MOSFET, or metal-oxide-semiconductor field-effect transistor, and it belongs to the single FETs category. It is widely used in a variety of circuits and applications. This article will discuss the application fields and working principle of the RSD200N05TL.
Applications
RSD200N05TL is commonly used in power circuits and amplifiers. It is a versatile MOSFET that is applicable to a wide range of applications. In particular, it is used in thermal regulation and management, such as heating and cooling systems. In addition, it is used in audio amplifiers and other audio systems. It can also be used in a variety of other applications, such as inverters, motor drives, and static converters.
Working Principle
The RSD200N05TL is a type of insulated gate field-effect transistor (IGFET). This type of MOSFET uses voltage to control the current flowing through the device. The MOSFET is composed of three terminals: the gate, drain and source. The gate terminal is connected to an insulated gate, and it controls the current by applying a voltage. When a voltage is applied between the gate and source terminals, a gate-to-source voltage (Vgs) is created. This voltage determines the resistance between the drain and source terminals, and this resistance controls the amount of current that flows through the transistor.
The MOSFET can be operated in two major modes – the enhancement mode and the depletion mode. In the enhancement mode, a positive voltage is used to increase the resistance between the drain and source, thereby inhibiting current flow. On the other hand, in the depletion mode, a negative voltage is applied to reduce the resistance between the drain and source, and this increases the amount of current flowing through the transistor.
Conclusion
The RSD200N05TL is a versatile MOSFET that can be used in a variety of circuits and applications. It uses a voltage to control the resistance between the drain and source terminals, which in turn determines the amount of current flowing through the device. The device can be operated in both the enhancement and depletion modes, depending on the type of voltage applied to the gate terminal.
The specific data is subject to PDF, and the above content is for reference
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