| Allicdata Part #: | RSD221N06TL-ND |
| Manufacturer Part#: |
RSD221N06TL |
| Price: | $ 0.43 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET N-CH 60V 22A CPT3 |
| More Detail: | N-Channel 60V 22A (Tc) 850mW (Ta), 20W (Tc) Surfac... |
| DataSheet: |  RSD221N06TL Datasheet/PDF |
| Quantity: | 1000 |
| 2500 +: | $ 0.38949 |
| Vgs(th) (Max) @ Id: | 3V @ 1mA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | CPT3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 850mW (Ta), 20W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1500pF @ 10V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 26 mOhm @ 22A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Tape & Reel (TR) |
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The RSD221N06TL is a logic level N-Channel MOSFET, designed for high current switching applications. Its low on-state resistance makes it ideal for use in systems that require high current switching, as well as systems where power efficiency and fast switching are paramount. It is available in packages that are suitable for surface mount and through-hole mounting.
RSD221N06TL has a maximum drain source voltage of 60V, a drain current of 134A, a low threshold voltage of 1.4V, a maximum gate source voltage of 20V, and a maximum power dissipation of 4.2W. It is an excellent choice for applications in high frequency switching and fast load current switching.
The main application fields of RSD221N06TL are in power management, motor control, and audio/video production. It is often used in motor control applications, as it has a low on-state resistance and fast switching speeds that enable the efficient control of motor speeds. It is also used in high-frequency switching applications, such as audio/video production, that require low on-state resistance and fast switching speeds.
The working principle of the RSD221N06TL is relatively simple. It is a type of MOSFET (metal-oxide-semiconductor FET) that has a gate, a drain, and a source. The gate is controlled by a voltage applied to it, which either turns the MOSFET on or off, depending on the magnitude of that voltage. When the MOSFET is on, current can flow from the source to the drain, and when the voltage on the gate is reversed, the MOSFET is off.
The RSD221N06TL is a logic level N-Channel MOSFET that is ideally suited for applications that require high current switching, low on-state resistance, and fast switching speeds. It is used in a variety of applications, such as motor control, high-frequency switching, and audio/video production, and is relatively simple to operate, making it an excellent choice for applications in these areas.
The specific data is subject to PDF, and the above content is for reference
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