RSD220N06TL Allicdata Electronics
Allicdata Part #:

RSD220N06TLTR-ND

Manufacturer Part#:

RSD220N06TL

Price: $ 0.53
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 60V 22A SOT428
More Detail: N-Channel 60V 22A (Ta) 20W (Ta) Surface Mount CPT3
DataSheet: RSD220N06TL datasheetRSD220N06TL Datasheet/PDF
Quantity: 2500
1 +: $ 0.53000
10 +: $ 0.51410
100 +: $ 0.50350
1000 +: $ 0.49290
10000 +: $ 0.47700
Stock 2500Can Ship Immediately
$ 0.53
Specifications
Rds On (Max) @ Id, Vgs: --
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: CPT3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 20W (Ta)
FET Feature: --
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: --
Series: --
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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The RSD220N06TL is a high-efficiency N-channel MOSFET that is able to handle large currents and high voltages. It is a single, advanced silicon-on-insulator (SOI) technology power MOSFET. This makes the device particularly well-suited for use in high-power applications, such as motor control, industrial automation and lighting control.

As for its working principle, the RSD220N06TL is operated with drain and gate voltages. When a voltage is applied to the gate it forms an inversion layer between the gate and the drain, allowing current to flow from the source to the drain. The resistance of this channel is determined by the amount of current flowing, and the drain-source voltage.

When the voltage is removed, the current stops and the device turns off. This makes it ideal for use in high-current, high-power switching applications. In addition, the RSD220N06TL is highly efficient, making it ideal for use in consumer electronics, automotive, aerospace and industrial applications.

Due to its high drain-source voltage rating and its low thermal resistance, the RSD220N06TL is ideal for use in power circuits such as power amplifiers, inverters and DC-DC converters. It is also capable of high frequency switching, which makes it ideal for applications in power management and high power switching applications. Additionally, the RSD220N06TL can be used as a protection device in power circuits, as it has a low on-state resistance.

In summary, the RSD220N06TL is a high-efficiency N-channel MOSFET that is able to handle large currents and high voltages. It is particularly well-suited for use in high-power switching applications, power management applications, power amplifiers and DC-DC converters. In addition, it is highly efficient and has a low thermal resistance, making it ideal for use in consumer electronics, automotive and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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