
Allicdata Part #: | RSD220N06TLTR-ND |
Manufacturer Part#: |
RSD220N06TL |
Price: | $ 0.53 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 60V 22A SOT428 |
More Detail: | N-Channel 60V 22A (Ta) 20W (Ta) Surface Mount CPT3 |
DataSheet: | ![]() |
Quantity: | 2500 |
1 +: | $ 0.53000 |
10 +: | $ 0.51410 |
100 +: | $ 0.50350 |
1000 +: | $ 0.49290 |
10000 +: | $ 0.47700 |
Rds On (Max) @ Id, Vgs: | -- |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | CPT3 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 20W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Vgs(th) (Max) @ Id: | -- |
Series: | -- |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The RSD220N06TL is a high-efficiency N-channel MOSFET that is able to handle large currents and high voltages. It is a single, advanced silicon-on-insulator (SOI) technology power MOSFET. This makes the device particularly well-suited for use in high-power applications, such as motor control, industrial automation and lighting control.
As for its working principle, the RSD220N06TL is operated with drain and gate voltages. When a voltage is applied to the gate it forms an inversion layer between the gate and the drain, allowing current to flow from the source to the drain. The resistance of this channel is determined by the amount of current flowing, and the drain-source voltage.
When the voltage is removed, the current stops and the device turns off. This makes it ideal for use in high-current, high-power switching applications. In addition, the RSD220N06TL is highly efficient, making it ideal for use in consumer electronics, automotive, aerospace and industrial applications.
Due to its high drain-source voltage rating and its low thermal resistance, the RSD220N06TL is ideal for use in power circuits such as power amplifiers, inverters and DC-DC converters. It is also capable of high frequency switching, which makes it ideal for applications in power management and high power switching applications. Additionally, the RSD220N06TL can be used as a protection device in power circuits, as it has a low on-state resistance.
In summary, the RSD220N06TL is a high-efficiency N-channel MOSFET that is able to handle large currents and high voltages. It is particularly well-suited for use in high-power switching applications, power management applications, power amplifiers and DC-DC converters. In addition, it is highly efficient and has a low thermal resistance, making it ideal for use in consumer electronics, automotive and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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