RSH065N03TB1 Discrete Semiconductor Products |
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| Allicdata Part #: | RSH065N03TB1TR-ND |
| Manufacturer Part#: |
RSH065N03TB1 |
| Price: | $ 0.27 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET N-CH 30V 6.5A SOP8 |
| More Detail: | N-Channel 30V 6.5A (Ta) 2W (Ta) Surface Mount 8-SO... |
| DataSheet: |  RSH065N03TB1 Datasheet/PDF |
| Quantity: | 2500 |
| 2500 +: | $ 0.24477 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Not For New Designs |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 6.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
| Rds On (Max) @ Id, Vgs: | 27 mOhm @ 6.5A, 10V |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 8.6nC @ 5V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 430pF @ 10V |
| FET Feature: | -- |
| Power Dissipation (Max): | 2W (Ta) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-SOP |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
RSH065N03TB1 is a state-of-the-art MOSFET from ROHM, which is a leader in power semiconductors and power device solutions for modern electronics design. The device is designed for automotive applications and offers exceptional reliability and performance.
This MOSFET is an N-channel device that is built with ROHM’s advanced trench gate CMOS process technology to provide excellent gate charge characteristics, low RDS(ON) power consumption, and high drain current capabilities.
The RSH065N03TB1 has features such as steady state dv/dt capability, overcurrent protection, and short-circuit protection. It also has an integrated logic level control which makes it easy to use and highly reliable. This makes the device ideal for applications such as motor control, LED control, and DC/DC converters.
The device typically has a drain current of 65A, on-resistance of 30mΩ, and maximum drain-source voltage of 30V. It can support up to 150V if the source is at least 20V higher than the drain. The operating temperature range is from -55 to +150°C.
The working principle of a MOSFET is based on the voltage driven switching behavior of an insulated gate. When a voltage is applied on the gate terminals, it creates an electric field that penetrates the oxide layer and forms a conductive path between the drain and the source. This allows for current to flow only when the voltage is applied and enables the control of the current flow using the gate voltage.
The RSH065N03TB1 is a great choice for automotive applications as it offers excellent reliability and performance. It offers distinct features that make it an ideal choice for superior and efficient operation, as well as a wide operating temperature range. Furthermore, the device’s integrated logic level control allows for easy, reliable operation.
The specific data is subject to PDF, and the above content is for reference
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