Allicdata Part #: | RSH070P05GZETBTR-ND |
Manufacturer Part#: |
RSH070P05GZETB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CH 45V 7A SOP8 |
More Detail: | P-Channel 45V 7A (Ta) 2W (Ta) Surface Mount 8-SOP |
DataSheet: | RSH070P05GZETB Datasheet/PDF |
Quantity: | 5000 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4100pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 47.6nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 27 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
Drain to Source Voltage (Vdss): | 45V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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RSH070P05GZETB is a general purpose Field Effect Transistor (FET) from Panasonic. It is a single enhancement-mode FET device with a breakdown voltage of 7V, a current rating of 500mA, an input capacitance of 37pF and a gate-source resistance of 70ohms.
An FET is a type of transistor that controls the current between two regions of a semiconductor. It consists of three terminals: a source (S), a drain (D) and a gate (G). A small voltage applied to the gate creates a conductive pathway between the source and drain, allowing the current to flow. The gate is insulated from the rest of the transistor, preventing any current from flowing from the gate to the source and drain.
The RSH070P05GZETB is typically used for switching and amplifying electronic signals. It has a low on-state resistance, making it ideal for applications that require low power dissipation. It is also used in switching power supply stages, as it is capable of working with both AC and DC inputs.
The working principle of the RSH070P05GZETB is straightforward. Applying a voltage to the gate creates an electric field between the gate and the semiconductor surface (normally the source). This field creates a conductive path across the region of the semiconductor, allowing current to flow from one side to the other. The gate voltage is key in controlling the amount of current that flows.
By adjusting the gate voltage, the punch-through voltage can be changed, which means that the device can work as a voltage-controlled switch. This feature allows the device to be used in a variety of applications, such as in audio amplifiers, motor control, logic circuits and various other switching applications.
The device is also available in a through-hole package for those requiring manual soldering. This makes it ideal for prototyping and low-volume production. In addition, the device is RoHS compliant, making it safe to use in all types of applications.
In conclusion, the RSH070P05GZETB is an ideal FET for a variety of applications, due to its low on-state resistance, wide operating range, and wide capacitance range. Its through-hole package makes it suitable for both manual and automated soldering, and its RoHS compliance makes it safe to use in any application.
The specific data is subject to PDF, and the above content is for reference
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