RSH090N03TB1 Discrete Semiconductor Products

RSH090N03TB1 is a single N-channel enhancement mode MOSFET transistor with high speed and low input capacitance, which is suitable for a variety of short-circuit conditions. It is suited for linear amplification, RF switching and various discrete applications. It has a drain-source voltage rating of 90V, drain current rating of 43A, maximum gate threshold voltage of 4.5V, maximum power dissipation of 8W and a maximum junction temperature of 175℃. This transistor has an extremely high transconductance and is ideal for applications that require a fast response time and a sophisticated control of gate voltage.

RSH090N03TB1 has an operating temperature range of -55℃ to 175℃, a drain-source breakdown voltage of 90V and a maximum drain current of 43A. It has a fast switching action with a maximum turn-on time of 23 nanoseconds and a maximum turn-off time of 36 nanoseconds. It also provides an exceptionally low switching loss with a maximum gate threshold voltage of 4.5V. The device is also provided with a low gate input capacitance of 4.9pF and low gate input resistance of 15Ω. Furthermore, it provides a high gain with a maximum transconductance of 52 mS.

The application areas of RSH090N03TB1 are focused around switching and linear amplification. This device is commonly used for power supply circuits and motor drivers. It is also suitable for motor control, high voltage switching and broadband amplifiers. Other possible applications include phase detector and mixer circuits. It is also used in telecommunications and networking applications such as mobile phones. Additionally, the device can be used as a high-performance current sensing device in many automotive applications.

RSH090N03TB1 works in the same basic manner as other MOSFET transistors: current flow from source to drain is controlled by the gate voltage. The gate is the input terminal and is insulated from the other two terminals – the source and the drain. When an appropriate voltage is applied to the gate, the current flow from source to drain increases according to the applied voltage and current gain of the transistor. When the gate voltage is removed, the current flow stops.

In addition, the current flow increases exponentially when the voltage applied to the gate is increased further beyond the gate\'s threshold voltage. When the gate voltage is reduced, the current to the drain decreases. This phenomenon is known as “Power Gain”. The power gain of the RSH090N03TB1 is high, thanks to its high transconductance value of 52 mS. This makes this device suitable for power amplifiers and power converters.

In conclusion, RSH090N03TB1 is an N-channel enhancement mode MOSFET transistor, which has a drain-source voltage rating of 90V, a drain current rating of 43A, a maximum gate threshold voltage of 4.5V, a maximum power dissipation of 8W and a maximum junction temperature of 175℃. It has a fast switching action with a maximum turn-on time of 23 nanoseconds and a maximum turn-off time of 36 nanoseconds. Furthermore, it provides an exceptionally low switching loss with a maximum gate threshold voltage of 4.5V and a low gate input capacitance of 4.9pF. The application areas of this device are focused around switching and linear amplification, such as power supply circuits, motor drivers, and telecommunications and networking applications. It works using the same basic mechanism as other MOSFET transistors, where the current flow from source to drain is controlled by the gate voltage.