RSJ400N06TL

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RSJ400N06TL is a Electrical Field-Effect Transistor (MOSFET). It belongs to the group of Single Enhancement and depletion mode N-Channel MOSFETs (N-Channel Enhancement Mode Field-Effect Transistors). An embedded gate structure ensures high switching frequency capability. It is designed for use in high power and high current applications.

For a wide range of applications from 12V to 130V and lower, RSJ400N06TL offers improved performance, excellent ruggedness and thermal stability. An excellent combination of extended high voltage, Drain-Source breakdown voltage, avalanche energy and safe operating performance, makes RSJ400N06TL an ideal choice for any application where high power and heat dissipation are significant.

RSJ400N06TL can be used in various applications like AC/DC converters, server and high volume power supplies, electronic ballasts, high-efficiency motor drives, power factor correction in SMPS, high-current DC/DC converters and more. Furthermore, this device is suitable for driving large DC motors, providing power to high-power lighting, and in high- current switching circuits.

Working Principle: The RSJ400N06TL is a voltage source-controlled (N Channel) transistor. A voltage is applied to the Gate-Source of the device, which causes a channel to form between the Source and the Drain. Current then flows from the Drain to the Source. One of the key features of using the RSJ400N06TL is that it can be switched on and off with a sharp rise and fall time (on-off speed). This feature makes it well suited for Digital applications where fast switching is important.

When the Gate voltage is high, the device is “on” and current flows from the Drain to the Source. As the Gate voltage begins to decrease, the current begins to reduce until it reaches zero and the transistor is “off”. The device remains in the off-state so long as the Gate voltage remains low. This process can be compared to a valve that can be opened (on) and closed (off). The current flow through the transistor can be controlled by varying the Gate voltage.

In comparison to other types of transistors, an RSJ400N06TL has an output that is more linear and smoother due to the presence of a dedicated gate. Additionally, it has a higher Gate-Source voltage threshold that allows higher voltage differences between the Gate-Source and the Drain-Source when compared to a regular MOSFET. It also has a higher Drain-Source breakdown voltage than a regular MOSFET. This makes it a better option for higher power applications.

RSJ400N06TL is an excellent choice for high current and high power applications. It provides high voltage breakdown and excellent thermal stability, as well as improved performance. Its gate switching speed and low on-resistance make it the perfect solution for high-current, voltage-controlled applications.

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