RSJ450N04TL Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3V @ 1mA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	LPTS
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	50W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2400pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	43nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	13.5 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	45A (Ta)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Tape & Reel (TR)

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RSJ450N04TL Application Field and Working Principle

RSJ450N04TL is an RDS (on) Charge FET with very low capacitance. It is product of International Rectifier, specifically designed for RF (Radio Frequency) switching applications. This type of FET is especially appropriate for applications sensitive to high FET turn-on charge. This device is a high-density N-channel cell which gives superior electrical characteristics.

Application Field

RSJ450N04TL can be used for a variety of high power RF switching applications. It is commonly used for signal switching, signal boosting, baseband signal amplifying and RF signal reflecting. In addition, it can be used for high current applications such as switching DC power supplies and switchmode power supplies.

Working Principle

RSJ450N04TL is a very low capacitance FET, allowing it to switch high frequency signals very quickly. It achieves this by reducing the capacitance between the drain and source terminals. This FET consists of a gate, source and drain terminal with a thin layer of low-density conductive material along the insulating substrate. As the drain-source voltage is increased, current flows between the source and drain enabling the FET to be turned on. The gate terminal acts as a control, allowing the FET to be turned on or off as desired. When a negative voltage is applied to the gate terminal, electrons are packed into the thin layer at the drain end of the FET and the FET turns on. Conversely, when a positive voltage is applied to the gate terminal, electrons are pulled away from the thin layer and the FET turns off. The other key feature of this FET is its incredibly low capacitance. This allows the FET to conduct high frequency signals while minimising the amount of noise generated. This feature makes the FET suitable for use in a variety of high power RF switching applications.

Conclusion

RSJ450N04TL is a high power, low capacitance FET. Its main application fields include RF switching and high current applications. Its working principle involves the use of a gate terminal and a thin layer of low-density conductive material for controlling the FET\'s on and off states. Its low capacitance allows it to be used in a variety of high power RF switching applications which require fast switching speeds and low levels of noise.

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