RSJ400N10TL Discrete Semiconductor Products |
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| Allicdata Part #: | RSJ400N10TLTR-ND |
| Manufacturer Part#: |
RSJ400N10TL |
| Price: | $ 1.34 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET N-CH 100V 40A LPTS |
| More Detail: | N-Channel 100V 40A (Tc) 1.35W (Ta), 50W (Tc) Surfa... |
| DataSheet: |  RSJ400N10TL Datasheet/PDF |
| Quantity: | 1000 |
| 1000 +: | $ 1.21716 |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | LPTS (SC-83) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 1.35W (Ta), 50W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3600pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 27 mOhm @ 40A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The RSJ400N10TL is a n-channel high voltage power MOSFET produced by Mospec Semiconductor Corporation. It is a vertical N-channel power MOSFET operated with a unique gate-driving circuitry. It features high voltage, low gate charge and a low on-state resistance.
The main application field of the RSJ400N10TL includes power switching (Such as at the input stage of AC/DC converters and DC/DC converters), switching regulators, DC/AC converters, motor-driver, induction heating and many other general power applications.
The working principle of the RSJ400N10TL also known as vertical power MOSFET is relatively simple, and it works in a similar fashion to the enhancement-mode MOSFET. When the gate-source voltage is below the threshold voltage, the channel between the source and drain is blocked and the MOSFET is in the off-state. Moreover, when the gate voltage is increased to a point above the threshold voltage, the channel opens and current can flow from source to the drain.
RSJ400N10TL also functions as a high-speed switching device because of its unique gate-driving circuit. Upon the application of a low transfer voltage, the gate signal is amplified by a factor of up to 50. This allows for a fast switching of the MOSFET and makes it suitable for use in high-speed applications.
The RSJ400N10TL is also capable of handling high voltages, up to 600V and peak current of up to 100A, making it an ideal choice for large-scale power applications. Moreover, the gate charge and the on-state resistance of the RSJ400N10TL is relatively low compared to other MOSFETs, allowing for a more efficient power conversion and better handling of high-power applications.
The RSJ400N10TL is one of the most reliable MOSFETs and is widely used in various applications ranging from power switching to motor-drivers. Its high voltage and peak current capability, coupled with its low on-state resistance and gate charge, makes it an ideal choice for power switching applications. Furthermore, its unique gate-driving circuit allows for a fast switching time making it suitable for high-speed power applications.
The specific data is subject to PDF, and the above content is for reference
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