RTF015P02TL Discrete Semiconductor Products |
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Allicdata Part #: | RTF015P02TLTR-ND |
Manufacturer Part#: |
RTF015P02TL |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CH 20V 1.5A TUMT3 |
More Detail: | P-Channel 20V 1.5A (Ta) 800mW (Ta) Surface Mount T... |
DataSheet: | RTF015P02TL Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.17439 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 135 mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 5.2nC @ 4.5V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 560pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 800mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TUMT3 |
Package / Case: | 3-SMD, Flat Leads |
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RTF015P02TL Application Field and Working Principle
RTF015P02TL is a single N-channel Mosfet transistor designed to provide efficient switching of high-current loads and is used heavily in the power management unit of computing and communications systems. This transistor has a maximum drain-source voltage of 30V, a maximum drain current of 15A and a maximum power dissipation of 37.5W. Its on-resistance is 0.015 Ohms and it comes in TO-220 surface mount form.
RTF015P02TL is a TO-220 package, so it can be surface mounted. The transistor does not need to be mounted on any heatsink, but it is still important to make sure it is properly mounted and secured to avoid damage or short-circuits. The gate, drain, and source pins are numbered for easy identification. For many applications such as switching low side loads, it may be necessary to use a combination of two transistors in order to create a full bridge design. For example, the RTF015P02TL can be combined with a P-channel Mosfet.
RTF015P02TL transistors use the same operating method as other transistors, but they have a much larger drain-source voltage. This makes them ideal for power management in industrial and other equipment where high voltages are present. To turn the transistor on and off, a control voltage is applied at the gate. When this voltage exceeds a certain threshold, a current begins to flow through the drain and source pins and the transistor is "on". When the control voltage drops below this threshold, the transistor ceases to conduct, and the transistor is "off".
The maximum power that can be safely handled by the RTF015P02TL is 37.5W, which is not adequately achieved with a single transistor. To increase the power handling capacity, a series of transistors can be connected in parallel. This will allow for a greater current flow and thus, a higher power dissipation rating. Another important consideration is the on-resistance rating. The lower this resistance is, the lower the power losses across the transistor.
RTF015P02TL transistors are versatile, affordable, and easy to use for power control applications in high current and voltage load systems. They are reliable and can be used to create a full bridge design when combined with a P-channel Mosfet. Unlike other transistor types, they do not require a separate heatsink in order to operate, making them popular in space- constrained systems. Moreover, their on-resistance rating allows them to operate with minimal power loss. This makes them ideal for use in power-sensitive applications and systems.
The specific data is subject to PDF, and the above content is for reference
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