RTF016N05TL Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

RTF016N05TL is a product of N-Channel Enhancement mode Field-Effect Transistor (FET). It is an advanced version to the similar type of FETs. It contains a Kelvin source N-Channel FET that offers the advantages of eases of drive and excellent fast switching properties. This product is mainly used in DC-DC converters, Uninterruptible Power supply, Audio amplifiers, battery chargers, and other consumer products.

The working principle of a Field-Effect Transistor (FET) can be explained as follows. It is an electronic switch made up of two terminals called the gate and the source. When a current is applied to the gate, the voltage applied to it produces an electric field which controls the flow of current across the source and drain. The gate voltage is the control point for the current flow. If the gate voltage is high, the current will flow freely from the source to the drain. If the gate voltage is low, the current will be blocked and no current will flow through the FET.

RTF016N05TL is a new type of FET that combines Kelvin source with an N-channel FET. Its drain current is enhanced due to its Kelvin source design which allows faster switching times than a conventional FET with the same gate voltage. Moreover, its gate voltage is lowered, making it easier to drive with a lower current than is required for a conventional FET. This makes it particularly suitable for applications with low power such as DC-DC converters and audio amplifiers.

RTF016N05TL has a maximum drain voltage of 16V, a maximum drain current of 5A, and a maximum frequency of 1MHz. It can operate over a wide temperature range from -40°C to +150°C and is designed for surface mount applications.

RTF016N05TL is an ideal choice for many types of applications in the fields of power electronics and consumer electronics. It will provide users with faster switching times and excellent performance in many applications. It is also suitable for high-efficiency power conversion applications where tight size and space constraints are needed.

The specific data is subject to PDF, and the above content is for reference