RTF025N03FRATL Allicdata Electronics

RTF025N03FRATL Discrete Semiconductor Products

Allicdata Part #:

RTF025N03FRATLTR-ND

Manufacturer Part#:

RTF025N03FRATL

Price: $ 0.09
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: 2.5V DRIVE NCH MOSFET
More Detail: N-Channel 30V 2.5A (Ta) 800mW (Ta) Surface Mount T...
DataSheet: RTF025N03FRATL datasheetRTF025N03FRATL Datasheet/PDF
Quantity: 1000
3000 +: $ 0.08249
Stock 1000Can Ship Immediately
$ 0.09
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: TUMT3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Power Dissipation (Max): 800mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 67 mOhm @ 2.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The RTF025N03FRATL is a type of Field Effect Transistor (FET) that belongs to the single MOSFET family. FETs are semiconductor devices that, like transistors, control the flow of electrons between two points of a circuit. MOSFETs, however, are more specialized FETs that are tailored to be used in a variety of specific applications, including audio signal amplification, switching, and analog signal controlling. The RTF025N03FRATL is a new-generation MOSFET that offers increased performance and reliability for these applications when compared to most conventional MOSFETs.

In terms of application field, the RTF025N03FRATL can be used for a range of general purpose switching applications, as well as digital signal processing, industrial automation, and even automotive electronics. In addition, it can also be used in low voltage, low power applications in consumer electronics, such as portable and laptop computers, as well as mobile phones, medical and medical instrumentation, communications equipment, home appliances, lighting, and even power supplies. All of these applications require low power consumption and the RTF025N03FRATL offers low RDS(on) and low gate charge ratings, making it a great solution for such applications.

In terms of working principle, the RTF025N03FRATL is a MOSFET that uses a voltage-controlled oxide-semiconductor (VCO) in order to moderate and control the flow of electrons between two points in a circuit. When a positive input voltage is applied to the gate, it creates an electric field across the oxide layer which modifies the threshold voltage of the channel to allow current to flow from source to drain. The amount of current flow is proportional to the magnitude of the voltage applied to the gate. The channel is also reversible, meaning that it can be opened or closed depending on the applied voltage.

Additionally, the RTF025N03FRATL also has a built-in voltage regulator which serves to maintain a constant drain-source voltage, regardless of the applied input voltage. This helps ensure stable and accurate operation even under a range of different conditions. The FET also boasts a high degree of frequency response and a wide operational temperature range, thanks to its dielectric strength of 450V. This makes it suitable for use in a variety of high-speed switching and digital signal processing applications.

Overall, the RTF025N03FRATL is an excellent choice for a wide range of general purpose switching applications, digital signal processing applications, and low power consumer electronics applications. It offers increased reliability, a range of features, and improved performance when compared to most conventional MOSFETs. Thanks to its high dielectric strength and wide operational temperature range, it can be used in a variety of difficult-to-manage high-speed switching and digital signal processing applications. In short, the RTF025N03FRATL can offer a great solution for improved circuit performance and reliable operation.

The specific data is subject to PDF, and the above content is for reference

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