RTL030P02TR Discrete Semiconductor Products |
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Allicdata Part #: | RTL030P02TR-ND |
Manufacturer Part#: |
RTL030P02TR |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CH 20V 3A TUMT6 |
More Detail: | P-Channel 20V 3A (Ta) 1W (Ta) Surface Mount TUMT6 |
DataSheet: | RTL030P02TR Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.19645 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 4.5V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 760pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 1W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TUMT6 |
Package / Case: | 6-SMD, Flat Leads |
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The RTL030P02TR is a dual N-channel enhancement mode MOSFET. The device is designed for use with low voltage and digital power supply circuits, in particular the voltage range is 1.8V-3.3V. It is capable of handling high current load while providing low power consumption with a low on-state resistance of 30 milliohms. The RTL030P02TR is a versatile device with many applications, and its working principle can be explained in detail.
Applications
The RTL030P02TR is well-suited for a variety of applications, such as switching power because of its low on-state resistance and low threshold voltage. It can also be used for low- and high side switching, such as battery charge and discharge controls, and it has great performance for mobile phone power supply management. Additionally, the RTL030P02TR can be used for voltage amplifier circuits, motor drive circuits, motor control, and motor speed control.
The RTL030P02TR is also suitable for various other power applications, such as LED lighting, DC-DC converters, AC/DC motor breaking, energy harvesting, and energy storage systems.
Working Principle
The working principle of RTL030P02TR is based on field-effect transistor (FET) technology, which is a type of semiconductor switch or amplifier. The FET consists of three elements: the gate, the source and the drain. The gate is the control element of the device; when the gate voltage is applied, the voltage between the source and the drain changes, allowing current to flow in a single direction.
When the RTL030P02TR is operating as a switch, the gate voltage controls the flow of current between the source and the drain. When the gate voltage is high, the current flows from the source to the drain; when it is low, the current flows in the opposite direction. This is what allows the RTL030P02TR to be used for switching at low voltages.
The RTL030P02TR also has an internal protection circuit which prevents the device from getting damaged from over-voltage or short-circuits. The protection circuit is designed to shut off the power supply to the device if it detects a fault.
The RTL030P02TR is a versatile device with a wide range of applications and its working principle is based on FET technology. Its low on-state resistance, low threshold voltage and internal protection circuit make it a great choice for voltage amplifying and switching applications.
The specific data is subject to PDF, and the above content is for reference
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