RTL035N03FRATR Discrete Semiconductor Products |
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Allicdata Part #: | RTL035N03FRATR-ND |
Manufacturer Part#: |
RTL035N03FRATR |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | 2.5V DRIVE NCH MOSFET (AEC-Q101 |
More Detail: | N-Channel 30V 3.5A (Ta) 1W (Ta) Surface Mount TUMT... |
DataSheet: | RTL035N03FRATR Datasheet/PDF |
Quantity: | 6000 |
3000 +: | $ 0.09444 |
Vgs(th) (Max) @ Id: | 1.5V @ 1mA |
Package / Case: | 6-SMD, Flat Leads |
Supplier Device Package: | TUMT6 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 6.4nC @ 4.5V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 56 mOhm @ 3.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The RTL035N03FRATR is a Single N-Channel MOSFET (metal-oxide-semiconductor field-effect transistor), which is primarily used in switching applications. It is an advanced technology that is designed to provide improved energy efficiency, reduced component size, increased reliability and decreased power loss. This device is suitable for applications such as power supply circuits, motor control circuits, and other circuit designs where high frequency and low power consumption are important.
The RTL035N03FRATR has a maximum drain-source voltage of 1500 V and maximum drain-source on-state resistance of 0.0035 ohms. This MOSFET also has a gate-source threshold voltage of 1.8 V, drain-source breakdown voltage of 7.2 V and a maximum gate-source voltage of 6 V. These features make it suitable for use in a variety of different circuit designs. The maximum drain current (DC) for this MOSFET is 3 A, which makes it suitable for a range of applications from low power to high power usage.
The RTL035N03FRATR is designed to switch off when the gate-source voltage is zero, making it suitable for use as a low side switch in motor-drive and motor control circuits. The switching speed of this device is relatively fast, making it suitable for high frequency and low power consumption applications. Additionally, it features a high input impedance, low output capacitance and low EMI generation, making it suitable for use in a variety of power-supply and motor-driving applications.
The working principle of this device is based on the MOSFET’s ability to regulate the flow of electrons between the source and drain. A positive gate voltage attracts the electrons from the source to the drain. When the gate voltage reaches the threshold voltage, the channel between the source and drain is fully closed and the MOSFET is in the off state. When the gate voltage is reduced, the channel is opened and the MOSFET is in the on state.
The RTL035N03FRATR can be used in a variety of applications in the automotive industry, industrial, and consumer markets. It can be used in power supplies, motor control, and other circuit designs where high-frequency and low-power consumption are important. It can also be used in lighting and HVAC applications. Additionally, this MOSFET can be used in logic level shifters, motor drivers, and other digital circuits.
The RTL035N03FRATR is a Single N-Channel MOSFET that is designed to offer high performance and reliability in a variety of applications. Its fast switching speed, low drain-source on-state resistance, and low EMI generation make this device suitable for low power and high power applications. Additionally, its high input impedance and low output capacitance make it suitable for use in logic-level shifters, motor drivers, and other digital circuits.
The specific data is subject to PDF, and the above content is for reference
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