RTL035N03TR Discrete Semiconductor Products |
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Allicdata Part #: | RTL035N03TR-ND |
Manufacturer Part#: |
RTL035N03TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 30V 3.5A TUMT6 |
More Detail: | N-Channel 30V 3.5A (Ta) 1W (Ta) Surface Mount TUMT... |
DataSheet: | RTL035N03TR Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.5V @ 1mA |
Package / Case: | 6-SMD, Flat Leads |
Supplier Device Package: | TUMT6 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 10V |
Vgs (Max): | 12V |
Gate Charge (Qg) (Max) @ Vgs: | 6.4nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 56 mOhm @ 3.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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RTL035N03TR is a P-channel enhancement mode power field-effect transistor (FET). It is built using advanced technology to provide excellent RDS(ON), and low gate charge. It is designed for applications such as DC-DC converters, solenoid/relay drivers, and load switches. It has unbeatable on-state resistance and gate charge characteristics, making it the ideal choice for many applications.
RTL035N03TR has a maximum drain source voltage of -20V with a maximum Pulsed Drain Current of -35A, making it suitable for a wide range of applications. The maximum Junction Temperature is -150°C, providing an additional layer of protection and reliability. It is also RoHS compliant meaning that it meets the standards from the EU directive on the restriction of hazardous substances.
The RTL035N03TR is typically used in applications such as DC-DC converters, load switches and relay drivers, where high current is required. The operating temperature range of -55 °C to +150 °C makes it ideal for use in harsh environments. It is also suitable for applications such as ac line powered equipment, automotive lighting, and industrial control circuits.
The RTL035N03TR works on the principle of field-effect transistors which are based on the idea of controlling current flow using an electric field. A voltage is applied to the gate of the FET, which creates a conducting channel between the source and drain. This channel can be used to control the current flow between the source and drain. The gate voltage acts as a switch and when it is off, the source and drain are disconnected and no current flows. The gate voltage can be used to control the current flow, allowing for precise control of the current.
This makes the RTL035N03TR an excellent choice for a wide range of applications. Its low on-state resistance of 0.25ohm to 0.3ohm and low gate charge makes it an ideal choice for applications that require precise currents and power usage. The operating temperature range of -55 °C to +150 °C makes it suitable for use in harsh environments and its RoHS compliance means that it meets the EU directive on the restriction of hazardous substances.
In conclusion, the RTL035N03TR is an advanced P-channel enhancement mode power FET designed for applications such as DC-DC converters, solenoid/relay drivers, and load switches. Its excellent characteristics such as its low on-state resistance and gate charge, along with its operating temperature range make it an ideal choice for many applications. Its advanced technology and features make it a reliable and powerful choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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