RTR025N05TL Discrete Semiconductor Products

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The RTR025N05TL is an N-channel power MOSFET designed for low to medium current applications. It has a maximum continuous drain current of 25 A, a gate-source voltage range of -2 to +6 V and a maximum thermal resistance of 70 C/W. It is constructed using the latest trench technology, making it ideal for demanding applications such as motor control and general purpose power switching.

RTR025N05TL helps to develop power supplies, boost DC-DC converters, motor control, and audio amplifiers. It also offers an excellent switching performance as well as a fast switching response. The unique trench technology with an epitaxial structure used in RTR025N05TL ensures an accurate current regulation. It makes it suitable for use in mobile devices, handheld radios and other portable equipment, where a small size and low on-resistance come in handy.

The working principle of RTR025N05TL is simple, yet it is noteworthy. It works by applying a positive voltage on the gate * G * pin relative to its source * S * pin. This voltage creates an electric field around the gate, called the gate-source voltage. This field then causes the electrons to pass through a tiny channel underneath the gate, allowing current to flow from the drain to the source. The greater the voltage applied to the gate, the more current is allowed to flow.

The semiconductor structure of the RTR025N05TL is similar to that of its predecessors. The current-carrying channel is created within an N-type semiconductor material. The MOSFET\'s terminals include the source * S *, drain * D *, and gate * G *. When the gate is negatively charged relative to its source, it creates depletion at the channel, thereby blocking the flow of current. This phenomenon is known as the MOSFET\'s "OFF" state. If the gate is positively charged relative to its source, it creates a low resistance channel, allowing current to flow. This phenomenon is called the MOSFET\'s "ON" state.

The RTR025N05TL has many excellent features, such as high power capacity, low on-resistance, high switching speed and high reliability. It is the perfect choice for power switching, particularly in low to medium power applications. It is ideal for heavy-duty applications such as motor control, general purpose power switching, and audio amplifiers.

In summary, RTR025N05TL is a reliable, low-power MOSFET that is ideal for power switching applications. It is constructed using the latest trench technology and offers an excellent switching performance. It works by creating an electric field at the gate, which allows current to flow from the drain to the source. This makes it suitable for use in mobile devices, handheld radios and other portable equipment where a small size and low on-resistance are important.

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