RTR025P02TL Allicdata Electronics

RTR025P02TL Discrete Semiconductor Products

Allicdata Part #:

RTR025P02TLTR-ND

Manufacturer Part#:

RTR025P02TL

Price: $ 0.14
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET P-CH 20V 2.5A TSMT3
More Detail: P-Channel 20V 2.5A (Ta) 1W (Ta) Surface Mount TSMT...
DataSheet: RTR025P02TL datasheetRTR025P02TL Datasheet/PDF
Quantity: 1000
1 +: $ 0.14000
10 +: $ 0.13580
100 +: $ 0.13300
1000 +: $ 0.13020
10000 +: $ 0.12600
Stock 1000Can Ship Immediately
$ 0.14
Specifications
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: SC-96
Supplier Device Package: TSMT3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 95 mOhm @ 2.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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The RTR025P02TL is a N-channel enhancement-mode thin-film power MOSFET (metal oxide semiconductor field-effect transistor). It is specifically designed to improve efficiency in power conversion applications such as switch-mode power supply (SMPS) designs, motor drives, and other high frequency and high performance applications. This model is available with a special package featuring an integrated heat spreader that improves thermal management, allowing for better system performance. Additionally, an integrated ESD (electrostatic discharge) diode helps protect the device from damage due to ESD transients.

Application Field

RTR025P02TL is ideal for power management in consumer and commercial electronics, including PCs, servers, routers, switches, gaming consoles, and other portable devices. It is also suitable for automotive applications, such as fuel injection and engine control systems, as well as other automotive and consumer audio-visual applications.The device can be used for power electronic design and power conversion, including SMPS, LED lighting, inverters, Uninterruptible Power Supply (UPS), AC/DC converters, DC/DC converters, battery chargers, and motor drives. This model is also well-suited for industrial and medical applications, such as Building Automation System (BAS), security systems, CPR monitors, and other applications that require rugged performance and reliable switching.

Working Principle

The RTR025P02TL uses the concept of “enhancement-mode”, where no external power is needed to turn it on; it pulls current from the gate source connection to switch the device “on”. The device is rated in amps and is designed to provide a specific voltage level at a certain current range. This model is designed to handle up to a maximum of 27A at a 25V DC. The RTR025P02TL can be used with any standard logic-level NMOS family of transistors.When the gate is exposed to a logic high input, the thin-film structure between the gate and drain acts as an insulator, preventing current from flowing through the device until the necessary gate voltage is supplied. When the voltage level is reached, the thin-film structure allows the electrons to "tunnel" through the insulator, allowing current to flow from the drain to the source. The power MOSFET is also designed to be very efficient. Due to the low on-resistance, a higher current can be drawn from the source without significantly increasing the voltage drop across the device. This helps to reduce losses and increases efficiency. Additionally, the device also has high immunity against ESD events, allowing the device to be operated in harsh conditions.

The specific data is subject to PDF, and the above content is for reference

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