RTR030P02TL Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2V @ 1mA
Package / Case:	SC-96
Supplier Device Package:	TSMT3
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	1W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	840pF @ 10V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	9.3nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	75 mOhm @ 3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	3A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Not For New Designs
Packaging:	Tape & Reel (TR)

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Ant Semiconductor’s RTR30P02TL is an N-channel Independent Depletion MOSFET (IDFET) designed to provide industry-leading power efficiency and reliability. This device is able to provide robust on-state current, a low threshold voltage (V DS ), and a low R DS(on) ; making it suitable for a wide range of applications. The RTR30P02TL is a high-performance transistor for power management applications, and is compatible with logic level gate drives.The RTR30P02TL is a MOSFET (metal-oxide-semiconductor field-effect transistor) with excellent electrical characteristics and low on-resistance. The FET structure makes it an ideal choice for power supplies and other power circuits. It consists of an n-channel layout with a p-type gate and a drain and source which are connected together.The device is specially designed with an independent depletion mode (IDFET), which puts it at the cutting edge of short channel FET (SCCFET) technology. It has a very low threshold voltage and provides robust on-state current. This allows it to be used in a variety of applications because of its low resistance-on-state, making it suitable for high frequency operations, and its ability to handle large signal swings.In terms of its working principle, the RTR30P02TL works by modulating current flow between its two terminals. When the voltage is applied between the gate and the source, an electric field is formed and this will drive the electrons in the channel. As a result, a small current is produced. The amount of current depends on the amount of voltage applied, and the amount of resistance between the source and the drain, or between the gate and the source.Due to its IDFET structure, RTR30P02TL is also able to support extremely high current density, which means it can be used in high-current power supplies and other power management applications. The IDFET structure also allows for improved linearity and lower switching frequency, which results in improved efficiency and power savings.In general, the RTR30P02TL is a low-on-resistance MOSFET that is ideal for a wide range of applications such as power supplies, power management and other power circuits. It offers an impressive performance, increased reliability and power savings, making it a great choice for many industrial and commercial use cases. Its low threshold voltage, low on-resistance, and low current density make it a great fit for applications that require robust and reliable power efficiency.

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