RW1A013ZPT2R Discrete Semiconductor Products |
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Allicdata Part #: | RW1A013ZPT2RTR-ND |
Manufacturer Part#: |
RW1A013ZPT2R |
Price: | $ 0.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CH 12V 1.5A WEMT6 |
More Detail: | P-Channel 12V 1.5A (Ta) 400mW (Ta) Surface Mount 6... |
DataSheet: | RW1A013ZPT2R Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.08737 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 12V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 260 mOhm @ 1.3A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 2.4nC @ 4.5V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 290pF @ 6V |
FET Feature: | -- |
Power Dissipation (Max): | 400mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-WEMT |
Package / Case: | SOT-563, SOT-666 |
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Introduction
RW1A013ZPT2R, a transistor developed by the Japanese electronics manufacturer Rohm, is one of the many types of MOSFETs (metal-oxide semiconductor field-effect transistors) available in the market. This device is a single-switching device with a maximum current capability of 13A and a maximum blocking voltage of 250V, making it suitable for various applications.
Application Field
The RW1A013ZPT2R has several advantages over other metal-oxide semiconductor field-effect transistors due to its high current capability and power rating. Thus, it can be used in applications such as motor control, battery-driven circuitry, lighting and switch control, DC-DC converter control, and general purpose power switching.
The RW1A013ZPT2R can also be used for applications such as load switching and power logic in motor-driven systems, haptic driver applications, fan speed control and thermal shutdown, and automotive applications.
Working Principle
The working principle of the RW1A013ZPT2R is relatively simple. The transistor works by using electrons to activate a gate and thereby allowing or disallowing current flow between the drain and the source. This is known as "off-state" and "on-state" and is determined by the voltage applied to the gate terminal.
When the gate voltage is low, the MOSFET is in the off-state, resulting in the drain-to-source voltage being near zero and the transistor unable to conduct. When the gate voltage increases, the MOSFET\'s internal gate-to-source voltage produces a channel between the drain and the source so that current will flow.
The RW1A013ZPT2R\'s On-state RDS (on) value is relatively low in comparison to other types of transistors, making it an ideal choice for applications where low power consumption, fast switching speeds, and low EMI (electromagnetic interference) are desired.
Conclusion
The RW1A013ZPT2R is a single-switching MOSFET with a maximum current capability of 13A and a maximum blocking voltage of 250V. It is suitable for various applications including motor control, battery-driven circuitry, lighting and switch control, DC-DC converter control, and general purpose power switching. The RW1A013ZPT2R has a relatively low On-state RDS (on) value and fast switching speeds, making it an ideal choice for applications needing low power consumption.
The specific data is subject to PDF, and the above content is for reference
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