RW1A013ZPT2R Allicdata Electronics

RW1A013ZPT2R Discrete Semiconductor Products

Allicdata Part #:

RW1A013ZPT2RTR-ND

Manufacturer Part#:

RW1A013ZPT2R

Price: $ 0.10
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET P-CH 12V 1.5A WEMT6
More Detail: P-Channel 12V 1.5A (Ta) 400mW (Ta) Surface Mount 6...
DataSheet: RW1A013ZPT2R datasheetRW1A013ZPT2R Datasheet/PDF
Quantity: 1000
1 +: $ 0.10000
10 +: $ 0.09700
100 +: $ 0.09500
1000 +: $ 0.09300
10000 +: $ 0.09000
Stock 1000Can Ship Immediately
$ 0.1
Specifications
Vgs(th) (Max) @ Id: 1V @ 1mA
Package / Case: SOT-563, SOT-666
Supplier Device Package: 6-WEMT
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 400mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 6V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 260 mOhm @ 1.3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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Introduction

RW1A013ZPT2R, a transistor developed by the Japanese electronics manufacturer Rohm, is one of the many types of MOSFETs (metal-oxide semiconductor field-effect transistors) available in the market. This device is a single-switching device with a maximum current capability of 13A and a maximum blocking voltage of 250V, making it suitable for various applications.

Application Field

The RW1A013ZPT2R has several advantages over other metal-oxide semiconductor field-effect transistors due to its high current capability and power rating. Thus, it can be used in applications such as motor control, battery-driven circuitry, lighting and switch control, DC-DC converter control, and general purpose power switching.

The RW1A013ZPT2R can also be used for applications such as load switching and power logic in motor-driven systems, haptic driver applications, fan speed control and thermal shutdown, and automotive applications.

Working Principle

The working principle of the RW1A013ZPT2R is relatively simple. The transistor works by using electrons to activate a gate and thereby allowing or disallowing current flow between the drain and the source. This is known as "off-state" and "on-state" and is determined by the voltage applied to the gate terminal.

When the gate voltage is low, the MOSFET is in the off-state, resulting in the drain-to-source voltage being near zero and the transistor unable to conduct. When the gate voltage increases, the MOSFET\'s internal gate-to-source voltage produces a channel between the drain and the source so that current will flow.

The RW1A013ZPT2R\'s On-state RDS (on) value is relatively low in comparison to other types of transistors, making it an ideal choice for applications where low power consumption, fast switching speeds, and low EMI (electromagnetic interference) are desired.

Conclusion

The RW1A013ZPT2R is a single-switching MOSFET with a maximum current capability of 13A and a maximum blocking voltage of 250V. It is suitable for various applications including motor control, battery-driven circuitry, lighting and switch control, DC-DC converter control, and general purpose power switching. The RW1A013ZPT2R has a relatively low On-state RDS (on) value and fast switching speeds, making it an ideal choice for applications needing low power consumption.

The specific data is subject to PDF, and the above content is for reference

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