RW1A020ZPT2R Discrete Semiconductor Products |
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Allicdata Part #: | RW1A020ZPT2RTR-ND |
Manufacturer Part#: |
RW1A020ZPT2R |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CH 12V 2A WEMT6 |
More Detail: | P-Channel 12V 2A (Ta) 700mW (Ta) Surface Mount 6-W... |
DataSheet: | RW1A020ZPT2R Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.13027 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 12V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 105 mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 6.5nC @ 4.5V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 770pF @ 6V |
FET Feature: | -- |
Power Dissipation (Max): | 700mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-WEMT |
Package / Case: | SOT-563, SOT-666 |
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The RW1A020ZPT2R is an advanced version of single N-channel MOSFET that provides superior performance in various applications. It is built with a low on-resistance, a low input capacitance, and a low threshold voltage. This makes the RW1A020ZPT2R suitable for use in a wide range of applications. In this article, we will discuss the RW1A020ZPT2R\'s application field and working principle.
Application Field
The RW1A020ZPT2R is a great choice for various high-speed, high-power applications such as logic-level gate drivers and power ICs. It is generally used for high-speed switching, load switching, voltage regulation, and other applications where a low on-resistance, wide operating voltage range, and fast switching performance are desired. In addition, the RW1A020ZPT2R works well in many applications where ultra-low on-resistance performance, improved thermal design and ruggedness are needed.
The RW1A020ZPT2R is also suitable for a variety of audio applications. It is widely used in power amplifiers, home cinema systems, professional audio systems, and automotive audio systems. Its low input capacitance and low gate-to-source capacitance make it ideal for audio applications such as line level switching and low- to medium-power amplifier applications.
Working Principle
The RW1A020ZPT2R is a single N-channel MOSFET. It is a three-terminal device that consists of the source, drain and gate. The current flows from the source to the drain and is controlled by the gate voltage. When a positive voltage is applied to the gate, the MOSFET turns on and the current flows from the source to the drain. When the gate voltage is decreased, the MOSFET will turn off and the current will stop flowing.
The RW1A020ZPT2R is a high-performance device with a low on-resistance and a low input capacitance. The low on-resistance of the RW1A020ZPT2R allows for high-speed switching and a low input capacitance helps reduce switching times. The RW1A020ZPT2R provides excellent thermal design and ruggedness, making it suitable for use in a wide range of applications.
The RW1A020ZPT2R also has a low threshold voltage, which makes it ideal for use in logic-level applications. The low threshold voltage allows for low voltage logic level operations and improves the efficiency of the system.
Conclusion
The RW1A020ZPT2R is a single N-channel MOSFET with a low on-resistance, low input capacitance, and low threshold voltage. It is suitable for a wide range of applications, including high-speed switching, load switching, voltage regulation, audio applications, and logic-level gate drivers. It also provides excellent thermal design and ruggedness. This makes the RW1A020ZPT2R an excellent choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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