RW1A030APT2CR Allicdata Electronics

RW1A030APT2CR Discrete Semiconductor Products

Allicdata Part #:

RW1A030APT2CRTR-ND

Manufacturer Part#:

RW1A030APT2CR

Price: $ 0.09
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET P-CH 12V 3A WEMT6
More Detail: P-Channel 12V 3A (Ta) 700mW (Ta) Surface Mount 6-W...
DataSheet: RW1A030APT2CR datasheetRW1A030APT2CR Datasheet/PDF
Quantity: 16000
8000 +: $ 0.08085
Stock 16000Can Ship Immediately
$ 0.09
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 42 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Vgs (Max): -8V
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 6V
FET Feature: --
Power Dissipation (Max): 700mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-WEMT
Package / Case: SOT-563, SOT-666
Description

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FETs (Field Effect Transistors) and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are two common types of transistors used in many electronic devices and circuits. They are used in a variety of applications, ranging from basic digital circuit switching to powering a full computer system. The RW1A030APT2CR is a single MOSFET manufactured by ROHM Semiconductor and is used in a wide range of applications. This article will discuss the application field of the RW1A030APT2CR and its basic working principle.

The RW1A030APT2CR is a single voltage-controlled MOSFET (V-MOSFET) that has an operating voltage range of -60 V to +100 V and a continuous power rating of 60 W. It has a case to 88 for the source and drain electrodes, allowing for easy integration into circuit boards. It is designed for motor control, switching power supply, low-frequency amplifier, UPS, inverter, lamp and LED drivers, and many more applications. It is also widely used in industrial automation and robotics systems as it allows for better temperature and voltage control.

The main advantage of using the RW1A030APT2CR is its low on-state resistance, which helps lower the power loss and increases the efficiency of the circuit. The device also has a low gate-charge voltage, allowing for more precise control of the device. Additionally, it offers fast switching, allowing for better performance in high-speed circuits.

The basic working principle of the RW1A030APT2CR is fairly simple. The device is a voltage-controlled transistor, which means that it is controlled by a voltage applied to the gate electrode. When the voltage is applied to the gate, it produces a depletion region in the semiconductor material which decreases the resistance between the source and drain. This allows current to flow between the source and drain. When the voltage is removed, the depletion region disappears and the resistance between the source and drain increases, blocking current flow.

In conclusion, the RW1A030APT2CR is a single voltage-controlled MOSFET manufactured by ROHM Semiconductor and is used in a wide range of applications, including motor control, switching power supply, low-frequency amplifier, and LED drivers. Its low on-state resistance and fast switching capabilities make it an ideal choice for many applications. The basic working principle of the device is fairly simple and is based on the voltage applied to the gate electrode.

The specific data is subject to PDF, and the above content is for reference

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