S26KS512SDPBHN020

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S26KS512SDPBHN020 is a 512k-word Synchronous SRAM from Toshiba Electronics, which belongs to the Memory classification. This memory is ideal for high performance, low-power applications, allowing designers to create systems with increased density, speed, and power efficiency.

In terms of application field, S26KS512SDPBHN020 has a wide range of usages. It is well suited for use in a variety of systems, including embedded industrial systems, portable digital appliances, data storage and processing systems, portable computing devices, and multimedia digital signal processing. It is also used in telecommunication systems and network equipment, as well as digital cameras, printers, and LCD devices.

As for the working principle, S26KS512SDPBHN020 features a flexible data path with handshaking logic and variable burst control modes that control the contact order. It also includes a high-speed Page Mode and its Cell Compaction (CC) feature, which significantly reduces idle time. The interfaces are optimized for low-latency access and dynamic data access, allowing for a fast, efficient data flow.

To use the S26KS512SDPBHN020, the user needs to apply an external clock signal to the device for operation. It is a high-speed device with a maximum clock frequency of 80MHz, allowing for faster data transfer and access. The interface supports two formats: single-byte mode and dual-byte mode. In single-byte mode, reading and writing to the memory are done in a single clock cycle, while in dual-byte mode it is done in two clock cycles. The device\'s built-in programmable address range control simplifies the process of setting up memory access.

The S26KS512SDPBHN020 also features a 16-bit data bus and and a programmable address width. It is capable of continuous read and write operations, which reduces the number of cycles required for data to be transferred. The device can operate in either synchronous or asynchronous mode, allowing the user to choose the method that is most suitable for the system\'s requirements. Additionally, the device has a built-in error checking and correction system, which ensures that errors in the data read from the memory are detected and corrected.

In summary, S26KS512SDPBHN020 is a high-performance, low-power memory device from Toshiba Electronics that is ideal for a variety of applications. It combines a high speed of 80 MHz, low latency access, flexible data paths and programmable address range control, making it an efficient and reliable option for a range of systems.

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