S26KS256SDABHA030

The S26KS256SDABHA030 is a type of memory. It is mainly used in the miniaturization applications such as automotive, mobile, industrial and military. It is widely used in industrial control and telecommunications, data storage, instrumentation and control, communications, military fields and automotive fields; and the main application fields are for high-speed application, large capacity and low power consumption.

The S26KS256SDABHA030 memory is a 256Mbit NOR Flash memory. It is a nonvolatile flash memory which stores objects, programs and data written in any precision and length from 8bits/byte to 32bits/word. It ensures data protection by an embedded ECC protection mechanism which can correct single-bit and multi-bit errors. The Low Voltage Programme Support (LVPS) feature supports down to the 1.7V programming and the Read Mode Enhancements (RME) feature enables fast and reliable data read performance.

Working Principle

The S26KS256SDABHA030 memory is based on a single flash area with virtual blocks, each of which contains four physical blocks is as direct mapped flash. On system setup, four physical blocks are mapped to a virtual block. In this manner an almost uniform read access time and data reliability are guaranteed.

The S26KS256SDABHA030 memory operates at 3.3V and 1.8V supply voltages. It offers four asynchronous read operating modes, four synchronous read operating modes and four Status/Configuration register operating modes. By using multiplexed address and data bus, single and multiple data can be written and retrieved efficiently from the memory.

The Flash command decoding unit, located in the Flash cell array, interprets the commands from the memory controller and sends appropriate control signals to the corresponding blocks. Here the Flash status, Block status and Page status are checked and appropriate actions are taken.

The internal data register of the S26KS256SDABHA030 memory holds the data which is to be programmed or read from the memory. During the read process, the data which is read from the memory is compared with the data that is stored in the data register to check for errors. If errors are detected, the Flash controller takes appropriate action.

The S26KS256SDABHA030 memory offers optimized power down modes to reduce power consumption. An internal timer allows multiple power down modes while continuously monitoring internal operations. This is done to prevent any occurrence of data corruption.

The S26KS256SDABHA030 has many characteristics, including low standby power consumption, high read bandwidth, low power write operations, and superior ECC protection mechanism. These features make the S26KS256SDABHA030 an attractive choice for embedded applications which need high speed read operations with low power consumption.