S29JL032J70TFA020

Series:	JL-J
Packaging:	Tray
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	32Mb (4M x 8, 2M x 16)
Write Cycle Time - Word, Page:	70ns
Access Time:	70ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	48-TSOP

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Introduction to S29JL032J70TFA020 Memory

S29JL032J70TFA020 is a high-density, high-speed static RAM device from Macronix. It is used for code and data storage applications, code shadowing, and caching of data information. This memory device offers 32Mbits of storage in a single device and can be accessed at 50 Times/second cycle time.

S29JL032J70TFA020 Application Field

The S29JL032J70TFA020 memory is ideal for a variety of applications, including system memory, code shadowing, caching, code storage, and data storage. It can be used in embedded systems and digital appliances and provides fast access times and high densities.The S29JL032J70TFA020 is also an ideal solution for a variety of industrial, medical, automotive, and consumer applications. Its high density allows it to be used in applications which require a high level of integration, such as industrial automation or medical imaging systems. The S29JL032J70TFA020 is also suitable for high-performance computing, where the fast access times are essential for achieving maximum performance.

S29JL032J70TFA020 Working Principle

The S29JL032J70TFA020 memory integrates a static RAM (SRAM) cell array, organized as a 4Mb x 8bit x 4 array. It is designed to operate with a supply voltage range of 2.7V to 3.6V and can be accessed at 50 ns cycle times in asynchronous or synchronous modes.The core of the SRAM cell array is an 8-bit static RAM cell, which consists of four cell transistors connected in a cross-coupled (cross-coupled SRAM, or CCP) design. This memory cell can store a data bit either in the form of a ‘1’ or ‘0’, depending on the values applied to the ‘Set’ and ‘Reset’ pins. The stored data will remain valid until the SRAM cell is accessed again.The S29JL032J70TFA020 memory also features a Synchronous Burst Mode (SBM) for increased throughput, which allows for data bursts of up to 16 clocks and 4 wait states. The SBM mode enables the memory to access data on the rising edge and write data on the falling edge of the clock signal.

Conclusion

The S29JL032J70TFA020 memory is a high-density, high-speed static RAM device which offers 32Mbits of storage in a single device and can be operated at 50 times/second cycle time. It is ideal for embedded systems, high-performance computing, industrial, medical, automotive, and consumer applications and provides fast access times and high densities. The S29JL032J70TFA020 memory integrates a static RAM (SRAM) cell array, organized as a 4Mb x 8bit x 4 array and is designed to operate with a supply voltage range of 2.7V to 3.6V. It features a Synchronous Burst Mode (SBM) for increased throughput and enables the memory to access data on the rising edge and write data on the falling edge of the clock signal.

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