S29JL064J60TFA000

Series:	JL-J
Packaging:	Tray
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	64Mb (8M x 8, 4M x 16)
Write Cycle Time - Word, Page:	60ns
Access Time:	60ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	48-TSOP (18.4x12)

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Introduction to S29JL064J60TFA000

The S29JL064J60TFA000 is a static random access memory device related to third-generation Fujitsu flash technology. It is part of Fujitsu’s ever-evolving line of standard SSD products. This product enables fast data storage and retrieval, with a storage capacity of up to 64 Gbits. Its advanced design allows for wide operation temperature range of -55°C to +85°C, as well as JEDEC 1.8 V and 3.3 V power supply compatibility.

Application Field of S29JL064J60TFA000

The S29JL064J60TFA000 has many applications in the field of memory, including but not limited to embedded systems, automotive systems, and consumer electronics. Among these applications, embedded systems in particular stand out. Thanks to its wide operating temperature range, this device can be used in various types of industrial control and software applications, such as machine control, industrial automation, and safety-related systems, making it a reliable choice for embedded system use.In automotive systems, the S29JL064J60TFA000 is ideal for use in car GPS navigation, driver monitoring, and emergency assistance systems. Its reliability makes it an ideal choice for situations involving time-sensitive data.The S29JL064J60TFA000 can also be found in consumer electronics like digital cameras, smartphones, and hard disk recorders. Its compatibility with JEDEC standards makes it a perfect fit for manufacturers looking to produce products with the highest standards of reliability and performance.

Working Principle of S29JL064J60TFA000

The S29JL064J60TFA000 follows the same basic principles of operation as other static random access memories (SRAMs). When the device is powered on, the address and data input lines are connected to transistors positioned in the array of memory cells. A "gate" structure is then used to control the amount of current that flows through the cells.The current is either stored in the cells as a "1" or "0" based on logic performing operations on the data. For example, when the data input is a "1," this logical operation will switch the current in the cells from low to high, and vice versa for a "0."The memory is then read or written to depending on the command given by the user. For example, if a read command is given, the address and data output lines will route the data from the cells to the connected device. If a write command is given, then the address and data input lines will write the data to the memory cells.The S29JL064J60TFA000 memory device is designed to operate reliably in a wide range of environmental conditions. Its advanced design and operating temperature range ensure that it can reliably store and access data in any application.

Conclusion

The S29JL064J60TFA000 is a static random access memory device related to third-generation Fujitsu flash technology. Its wide operating temperature range, combined with its compatibility with JEDEC standards, make it an ideal choice for many modern applications in the field of memory. Its versatility and reliability make it a great fit for embedded systems, automotive systems, and consumer electronics alike. Its advanced design allows for high-speed data storage and retrieval and is capable of storing up to 64 Gbits of data.

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