| Allicdata Part #: | 497-15170-ND |
| Manufacturer Part#: |
SCT20N120 |
| Price: | $ 10.53 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 1200V 20A HIP247 |
| More Detail: | N-Channel 1200V 20A (Tc) 175W (Tc) Through Hole Hi... |
| DataSheet: | SCT20N120 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 10.53000 |
| 10 +: | $ 10.21410 |
| 100 +: | $ 10.00350 |
| 1000 +: | $ 9.79290 |
| 10000 +: | $ 9.47700 |
| Vgs(th) (Max) @ Id: | 3.5V @ 1mA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | HiP247™ |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 200°C (TJ) |
| Power Dissipation (Max): | 175W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 650pF @ 400V |
| Vgs (Max): | +25V, -10V |
| Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 20V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 290 mOhm @ 10A, 20V |
| Drive Voltage (Max Rds On, Min Rds On): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
| Drain to Source Voltage (Vdss): | 1200V |
| Technology: | SiCFET (Silicon Carbide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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。The SCT20N120 is an advanced power metal–oxide–semiconductor field–effect transistor (MOSFET) that operates as an essential component in many electronic installations. Its ability to manage higher currents, voltages, and frequencies than other MOSFETs makes it particularly well-suited for advanced electronic applications. This article examines the SCT20N120 as well as its application field and working principle.
The SCT20N120 MOSFET is a high-performance device that delivers impressive performance in a variety of applications. It is composed of a three-terminal field-effect transistor with two main sources (S1 and S2) and one drain (Gate). S1 functions as the main control point that enables the device to operate as a switch and S2 provides the necessary power for its operation when used in SPDT applications.
The SCT20N120 features a voltage drop of just 12V when in its inactive state. This low voltage drop allows high-frequency switching to be achieved with minimal power loss in many applications. Additionally, the high current-handling capacity and low on-state resistance of the SCT20N120 make it an ideal choice for use in high-efficiency, energy-saving installations.
The SCT20N120 is particularly well-suited for use in a wide range of applications. It can be used in high-reliability automotive systems, high voltage switch gear, industrial robots, server PSU, and AC and DC motor drives. Its high frequency switching characteristics allow it to be used in high-speed communications equipment, including radio-frequency (RF) transmitters, along with other devices and systems.
The working principle of the SCT20N120 is relatively straightforward. When an electric current is applied to the Gate electrode, a voltage-dependent channel is created between S1 and S2. This channel acts as a switch that allows current to flow from S1 to S2. When no current is applied to the Gate electrode, the channel is closed and the switch is in its inactive state.
The SCT20N120 MOSFET is a reliable, efficient, and cost-effective approach to powering numerous electronics applications. Its low voltage drop and high frequency switching capabilities make it perfect for high-speed communication equipment, as well as for tackling high-efficiency, power-saving projects. As a result of its superior performance, the SCT20N120 is increasingly popular in a variety of industries, making it one of the most widely used MOSFETs in the world today.
The specific data is subject to PDF, and the above content is for reference
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SCT20N120 Datasheet/PDF