
Allicdata Part #: | SCT2H12NZGC11-ND |
Manufacturer Part#: |
SCT2H12NZGC11 |
Price: | $ 4.53 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 1700V 3.7A |
More Detail: | N-Channel 1700V 3.7A (Tc) 35W (Tc) Through Hole TO... |
DataSheet: | ![]() |
Quantity: | 15 |
1 +: | $ 4.52970 |
10 +: | $ 4.39381 |
100 +: | $ 4.30322 |
1000 +: | $ 4.21262 |
10000 +: | $ 4.07673 |
Vgs(th) (Max) @ Id: | 4V @ 900µA |
Package / Case: | TO-3PFM, SC-93-3 |
Supplier Device Package: | TO-3PFM |
Mounting Type: | Through Hole |
Operating Temperature: | 175°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 184pF @ 800V |
Vgs (Max): | +22V, -6V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 18V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 1.1A, 18V |
Drive Voltage (Max Rds On, Min Rds On): | 18V |
Current - Continuous Drain (Id) @ 25°C: | 3.7A (Tc) |
Drain to Source Voltage (Vdss): | 1700V |
Technology: | SiCFET (Silicon Carbide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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SCT2H12NZGC11 is a commonly used single high-power metal–oxide–semiconductor field-effect transistor (MOSFET). This device is utilized in a number of applications due to its unique properties and its performance. This article will discuss the application fields and working principle of SCT2H12NZGC11.
Application Field
SCT2H12NZGC11 is a high-power MOSFET with a current capability up to 4A. Its tolerance voltage of 40V and maximum temperature of 125℃ make it suitable for extreme conditions. Therefore, it is often used in harsh industrial environments. In particular, it is widely applied in power supply control, motor control, EMI shielding, and power switching.
SCT2H12NZGC11 is also suitable for consumer applications. Its low on-state resistance and ultra-low gate drive power make it an correct solution for consumer electronics. It can be used in the process of power management, and temperature control to increase energy efficiency.
Working Principle
SCT2H12NZGC11 operates in the enhancement mode,which means the MOSFET is turned on when a specific gate voltage (VGS) is applied and current flows between the drain and the source. Its high power and current capability are made possible by its sophisticated design. The device is placed in a virtual isolation platform and surrounded by a particularly robust SiO2 layer and gate oxide layer which ensures it can run smoothly in rugged environments.
The on-state resistance, RDS(ON), is significantly reduced by SCT2H12NZGC11’s structural design, leading to a more efficient conduction. At the same time, its power and current capability remain reliable. The robustness of the device is also increased with its widely used lead material—tin-plated copper (CIS or PCB). This material not only improves the heat resistance, but also maximizes the longevity of the product.
Conclusion
SCT2H12NZGC11 is a reliable and versatile single high-power MOSFET. It is suitable for both harsh industrial and consumer applications, as it can handle temperatures of up to 125℃ and support extreme conditions. Its low on-state resistance, ultra-low gate power, and robust construction make it a great choice for industrial and consumer electronics.
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