SCT2450KEC Allicdata Electronics
Allicdata Part #:

SCT2450KEC-ND

Manufacturer Part#:

SCT2450KEC

Price: $ 6.64
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 1200V 10A TO-247
More Detail: N-Channel 1200V 10A (Tc) 85W (Tc) Through Hole TO-...
DataSheet: SCT2450KEC datasheetSCT2450KEC Datasheet/PDF
Quantity: 15
1 +: $ 6.02910
10 +: $ 5.42808
25 +: $ 4.94575
100 +: $ 4.46330
250 +: $ 4.10140
500 +: $ 3.73951
Stock 15Can Ship Immediately
$ 6.64
Specifications
Vgs(th) (Max) @ Id: 4V @ 900µA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 85W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 463pF @ 800V
Vgs (Max): +22V, -6V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 18V
Series: --
Rds On (Max) @ Id, Vgs: 585 mOhm @ 3A, 18V
Drive Voltage (Max Rds On, Min Rds On): 18V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 1200V
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The SCT2450KEC is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that belongs to the single category. It is designed for applications that require high voltage and high current in which other types of transistors cannot be used. It is an ideal choice for switching applications in the automotive, industrial and consumer markets.

A MOSFET is a type of transistor which is commonly used in many applications. It is a voltage controlled device which means that it is activated by an electric field instead of a current. A voltage applied to the gate electrode of the MOSFET creates an electric field that is strong enough to cause electrons to move from the source to the drain which creates a conducting channel.

The SCT2450KEC has a high breakdown voltage of 190V. This makes it suitable for use in power supply circuits, motor controllers and other applications requiring high voltage and high current. The SCT2450KEC also has a low gate-drain charge which reduces switching losses and enables faster switching times.

The SCT2450KEC has a maximum drain-source voltage (VDS) of 150V and a maximum gate-source voltage (VGS) of 20V. It is capable of handling a peak current of up to 5.2A and has a maximum drain power of 21W. The SCT2450KEC is also available in both RoHS compliant and commercial options.

The working principle of a MOSFET is based on the behavior of electrons in the semi-conductor material. The primary components of a MOSFET are the gate, the source, and the drain. The gate is electrically insulated from the source and drain by a thin layer of insulating material. When a voltage is applied to the gate, it creates an electric field that repels electrons from the source to the drain creating a conducting channel between the source and the drain.

The SCT2450KEC can be used in a variety of applications including power supply circuits, motor controllers, H-bridge driver circuits and switching on/off AC load circuits. It is also well-suited for high frequency switching applications, such as in power inverters and switch-mode power supplies.

Due to its high voltage and current capabilities and low gate charge, the SCT2450KEC is an ideal choice for a wide variety of switching applications. It is easy to use and can be quickly integrated into any circuit design. The SCT2450KEC provides superior performance, reliability and longevity, making it an excellent choice for any project.

The specific data is subject to PDF, and the above content is for reference

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