Allicdata Part #: | SH8K15TB1-ND |
Manufacturer Part#: |
SH8K15TB1 |
Price: | $ 0.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET 2N-CH 30V 9A 8SOP |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 9A 2W Surface ... |
DataSheet: | SH8K15TB1 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.35196 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 9A |
Rds On (Max) @ Id, Vgs: | 21 mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 8.5nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 630pF @ 10V |
Power - Max: | 2W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
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SH8K15TB1 Application Field and Working Principle
SH8K15TB1 is a type of Array Field Effect Transistor (FET). It is a type of FET which morphs its current- and voltage-handling characteristics in relation to the charge carriers, which it controls. The SH8K15TB1 is a high-performance FET, and it is used in a range of demanding applications.
Potential Applications
The SH8K15TB1 can be used for a wide variety of power management systems, and it is often found in the industrial and commercial sectors. It can be used in automotive motor control, robotics, power supplies and PLC systems. It is also used in lightning protection and static switching. The device is rated to handle a maximum voltage of 175V and maximum device power dissipation of 32W.
Advantages
The SH8K15TB1 offers several advantages over standard types of FETs. It is a relatively low-noise device, thanks to its low capacitance and gate-induced drain leakage. The device features enhanced transient energy storage, which helps to reduce power consumption. The SH8K15TB1 also has a low on-resistance, which helps to improve power efficiency and reduce power dissipation.
Device Construction
The SH8K15TB1 is composed of a number of key components. The device has two leads, VD and VGS, which control its gate voltage and drain current. The device also has an internal gate-drain resistance, RDS(on), which controls the device\'s current. The device also contains a built-in antifringing protection circuit and a built-in thermal protection circuit.
Working Principle
The SH8K15TB1 operates as a two-port network. When the gate voltage is applied to the device, it modulates the drain current. This is achieved by the device controlling the flow of charge carriers through its drain-source channel. The device\'s on-resistance, RDS(on), is proportional to the gate voltage, and it is this property which allows the SH8K15TB1 to control the drain current.
When the device is in the "off" state, the drain-source channel is blocked, and no current flows through the device. When the device is in the "on" state, the drain-source channel is open, and current flows through the device. The drain current is controlled by changing the gate-source voltage, which alters the device\'s on-resistance.
The SH8K15TB1 is ideal for applications where high current or voltage control is required, such as motor control, power supplies and PLC systems. The device\'s highly reliable operation, low noise and low power dissipation make it well-suited for a range of demanding applications.
The specific data is subject to PDF, and the above content is for reference
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