SH8K2TB1 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 1mA
Base Part Number:	*K2
Supplier Device Package:	8-SOP (5.0x6.0)
Package / Case:	8-SMD, Gull Wing
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power - Max:	2W
Input Capacitance (Ciss) (Max) @ Vds:	520pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:	10.1nC @ 5V
Series:	--
Rds On (Max) @ Id, Vgs:	30 mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C:	6A
Drain to Source Voltage (Vdss):	30V
FET Feature:	Logic Level Gate
FET Type:	2 N-Channel (Dual)
Part Status:	Not For New Designs
Packaging:	Tape & Reel (TR)

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IntroductionSH8K2TB1 (also known as SK8K2-TB1) is an array of field-effect transistors (FETs). The array consists of eight independent MOSFETs with a single gate per device, which can be used to drive a variety of loads. This array is designed to achieve an extremely low on-resistance while also providing high output power. In this article, we will discuss the application field and working principle of SH8K2TB1 FET array. ApplicationsSH8K2TB1 FET array can be used in a variety of applications such as switching power supplies, DC-DC converters, voltage-mode control, current-mode control, polar power supplies and switching regulators. These devices provide a low off-state resistance and high output current, making them ideal for regulating power in various applications. Additionally, the FET array can also be used for applications such as motor control, automotive safety systems, and industrial control systems. Working PrincipleThe SH8K2TB1 FET array works by controlling the flow of current through the devices. Each MOSFET in the array has a single gate, and by controlling the potential of the gate, the drain-source current is regulated. When the gate voltage is at or below the threshold voltage (Vth), the drain-source current is 0 and the FET is in the “off” state. When the gate voltage is increased above the threshold voltage, the drain-source current starts to flow and the FET is in the “on” state. The amount of current that flows through the FETs depends on the magnitude of the gate voltage and can be adjusted by either increasing or decreasing the gate voltage. When the SH8K2TB1 FET array is used to drive a load, it is often done in parallel with a resistor, capacitor, or inductor. The purpose of these components is to provide additional current to the FET array when the load draws more current than the array can provide. For example, if the load is a motor, the resistor, capacitor, or inductor will help provide additional current to the FET array when the motor is operating at a higher speed than the array can provide. ConclusionIn conclusion, the SH8K2TB1 FET array is an array of field-effect transistors that can be used for a variety of applications. It is designed to provide an extremely low on-resistance while also providing high output power. The FET array works by controlling the flow of current through the devices by adjusting the gate voltage to turn the FETs on and off. Additionally, it can be used in parallel with other components to provide additional current when a load draws more current than the FET array can provide.

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