Allicdata Part #: | SH8K3TB1CT-ND |
Manufacturer Part#: |
SH8K3TB1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET 2N-CH 30V 7A SOP8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 7A 2W Surface ... |
DataSheet: | SH8K3TB1 Datasheet/PDF |
Quantity: | 2088 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Base Part Number: | *K3 |
Supplier Device Package: | 8-SOP |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power - Max: | 2W |
Input Capacitance (Ciss) (Max) @ Vds: | 600pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 11.8nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 7A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Discontinued at Digi-Key |
Packaging: | Cut Tape (CT) |
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The SH8K3TB1 is an advanced array of Field Effect Transistors (FETs) and Metal-Oxide Semiconductor Field Effect Transistors (MOSFETs). This type of component is widely used in a variety of applications such as power supplies and voltage regulation, integrated control systems, and analog/digital converters. Its design makes it ideal for switching large currents and/or voltages with a high degree of precision. The SH8K3TB1 is often also used in high frequency applications such as radio frequency power amplifiers, antenna tuners, and other devices that require fast, accurate switching.
The SH8K3TB1 is a type of MOSFET array that consists of four transistors, each with its own source, drain, and gate. The SH8K3TB1 is designed for use in single-ended, high-voltage applications such as power supplies, voltage regulators, integrated control systems, and analog/digital converters. The SH8K3TB1 is capable of withstanding voltages of up to 30V and can handle currents of up to 1000mA. The device is also ESD-protected, which means it can withstand high-Energy surges without sustaining damage.
In terms of its working principle, the SH8K3TB1 is based on the same principle as all FETs and MOSFETs, which is that of an electrically controlled current flow. In the SH8K3TB1, the four transistors in the array are arranged in such a way that they each have an individual gate, source, and drain. The gate is used to control the current flow through the transistors. When the gate voltage is low, current is allowed to flow from the source to the drain, thus allowing the desired power to be switched on or off.
However, the SH8K3TB1 has an additional feature that makes it stand out from other FETs and MOSFETs. This feature is known as the interlocked-source connection, which allows two or more transistors to be connected to the same source. This allows greater current handling flexibility and can be used for applications such as voltage regulators, analog/digital converters, and even switching circuits.
Finally, the SH8K3TB1 is a versatile component when it comes to its application fields. It can be used in power supplies, voltage regulation, integrated control systems, analog/digital converters, and a variety of other applications. Additionally, due to its high current handling capacity, the SH8K3TB1 is also widely used in a number of high-frequency applications such as radio frequency power amplifiers, antenna tuners, and base station amplifiers.
In conclusion, the SH8K3TB1 is a powerful and versatile component that can be used in a variety of applications. Its features and design make it ideal for switching large currents and/or voltages with a high degree of accuracy. Moreover, its interlocked source connection allows for greater current flexibility and its ability to withstand high voltage and current makes it ideal for high frequency applications. As such, the SH8K3TB1 is an invaluable component for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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