SH8K41GZETB Allicdata Electronics

SH8K41GZETB Discrete Semiconductor Products

Allicdata Part #:

SH8K41GZETBTR-ND

Manufacturer Part#:

SH8K41GZETB

Price: $ 0.27
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET 2N-CH 80V 3.4A 8SOP
More Detail: Mosfet Array 2 N-Channel (Dual) 80V 3.4A 1.4W Surf...
DataSheet: SH8K41GZETB datasheetSH8K41GZETB Datasheet/PDF
Quantity: 5000
2500 +: $ 0.23637
Stock 5000Can Ship Immediately
$ 0.27
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Power - Max: 1.4W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Description

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SH8K41GZETB is a special type of transistor, specifically part of the family of FETs (Field Effect Transistors) and also MOSFET (metal-oxide-semiconductor field effect transistors) arrays. It’s important to note that the SH8K41GZETB is not just a single FET or MOSFET—it’s an array, meaning that the SH8K41GZETB is made up of multiple FETs or MOSFETs interconnected in a matrix.

FETs, MOSFETs, and arrays have a wide range of applications. Generally, they are all used in circuits to control the voltage, current, or switching of devices. Depending on how they are arranged, they can be used to amplify, switch, regulate, and measure varying amounts of power in a circuit or on a device. FETs, MOSFETs, and their arrays can differ drastically in their capabilities, depending on their design.

The SH8K41GZETB is designed to take advantage of the increased power management capabilities of a MOSFET array. It’s designed to make use of the simpler control of this arrangement, as well as the increased current and voltage handling capabilities. It’s also designed to minimize power losses, offering significant performance benefits for certain electronics applications.

The primary use of the SH8K41GZETB is to act as a power switch for various electronic components and devices. A MOSFET array allows for multiple connections between different electronic components, eliminating the need for multiple power switching circuits. This simplifies the overall design and allows for more efficient use of available energy.

The SH8K41GZETB is designed to control the voltage and current going to and coming from the device or component it is connected to. By controlling the flow of electricity and regulating it, the SH8K41GZETB can improve efficiency, reduce power loss, and maximize performance of the device or component. The SH8K41GZETB can also be used in multiple arrangements and configurations, allowing for further optimization of performance.

The SH8K41GZETB also features a high temperature range, allowing it to be used in more intense temperature environments. This significantly increases the range of applications for which the SH8K41GZETB can be used. It can be used in power regulation in industrial applications, automotive applications, and solar panel installations, as well as many other high intensity applications.

The SH8K41GZETB also offers superior reverse current leakage when compared to other similar devices or components. This helps to minimize power loss during the flow of electricity and can help to optimize the performance of the device or component.

Finally, the SH8K41GZETB is designed to be extremely reliable and long lasting. Its construction is designed to minimize power losses, and its components are built to last. This means that the SH8K41GZETB can be used in applications where other devices or components may fail, providing significant cost savings and improved performance.

In summation, the SH8K41GZETB is a powerful and versatile transistor array, intended for efficient and reliable power management applications. Its multiple, interconnected FETs and MOSFETs offer superior voltage, current, and switching capabilities, while its robust construction and wide temperature range make it suited for a broad range of uses.

The specific data is subject to PDF, and the above content is for reference

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