Allicdata Part #: | SH8KA2GZETBTR-ND |
Manufacturer Part#: |
SH8KA2GZETB |
Price: | $ 0.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | 30V NCH+NCH MIDDLE POWER MOSFET |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 8A 2.8W Surfac... |
DataSheet: | SH8KA2GZETB Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.36515 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | -- |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 8A |
Rds On (Max) @ Id, Vgs: | 28 mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 330pF @ 15V |
Power - Max: | 2.8W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
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The SH8KA2GZETB is a type of array that is part of a family of insulated-gate-bipolar-transistors (IGBTs). IGBTs are three-terminal power semiconductor devices that integrate the control and conduction functions of both a field-effect transistor (FET) and a bipolar junction transistor (BJT). They are typically employed in many applications that require high efficiency, low energy losses and low electromagnetic interference (EMI).
The SH8KA2GZETB array is composed of two discrete IGBTs, each with complementary N- and P-channel FETs and BJTs. This structure results in a device that has a high current drive capability, a low on-state resistance, fast switching speed, and low EMI. These characteristics make it ideal for a wide range of uses, including motor control, ac-dc power conversion, UPS, variable-frequency drive (VFD), high-frequency switching, and power management systems.
The working principle of the SH8KA2GZETB is fairly simple. Each of the two IGBTs is designed to work in parallel, allowing them to perform the highest current drive function with the least amount of power dissipation. In most applications, the two IGBTs are configured to operate as switches, allowing them to control the flow of current in three distinct states: cutoff, saturation, and linear. During the cutoff mode, the IGBTs are turned off and no current is flowing. During the saturation mode, both IGBTs are turned on and equally share the current being drawn. During the linear state, the current flow is determined by the combined impedance of the two IGBTs.
The SH8KA2GZETB array offers several advantages in terms of reliability, performance, and cost. Its high current drive capability, low on-state resistance, and fast switching speed make it well-suited for a wide range of applications. Its two complementary IGBTs result in improved controllability and reduced power consumption compared to other power semiconductor devices. Additionally, the SH8KA2GZETB array is cost-effective due to its low cost per watt.
The SH8KA2GZETB array is an excellent choice for a wide range of applications due to its high reliability, high performance, and cost-competitiveness. It is well-suited for motor control, ac-dc power conversion, UPS, variable-frequency drive (VFD), high-frequency switching, and power management systems. Its parallel IGBTs are configured to operate as switches, allowing them to control the flow of current in three distinct states: cutoff, saturation, and linear. The SH8KA2GZETB array offers several advantages in terms of reliability, performance, and cost, making it an ideal choice for many power management applications.
The specific data is subject to PDF, and the above content is for reference
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