SH8K32TB1 Allicdata Electronics
Allicdata Part #:

SH8K32TB1TR-ND

Manufacturer Part#:

SH8K32TB1

Price: $ 0.54
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET 2N-CH 60V 4.5A SOP8
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 4.5A 2W Surfac...
DataSheet: SH8K32TB1 datasheetSH8K32TB1 Datasheet/PDF
Quantity: 5000
1 +: $ 0.54000
10 +: $ 0.52380
100 +: $ 0.51300
1000 +: $ 0.50220
10000 +: $ 0.48600
Stock 5000Can Ship Immediately
$ 0.54
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Base Part Number: *K32
Supplier Device Package: 8-SOP (5.0x6.0)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 65 mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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The SH8K32TB1 is a type of technology associated with field-effect transistors (FETs), particularly Metal Oxide Semiconductor Field-effect Transistors (MOSFETs). Specifically, SH8K32TB1 can be classified as an array, or multiple FETs, which are achieved by utilizing a process that integrates multiple cells within a unit.

When looking at array FETs, such as SH8K32TB1, the overall array behaves like one device, while the individual FETs can be connected to control devices and circuits. The overall advantage of this design is that implementation and component density can be improved with fewer connections. In addition, the overall performance can be improved due to the superior characteristics of modern FETs.

The SH8K32TB1 is a high-performance device that operates in an array configuration. It incorporates eight independent N-channel MOSFETs in a single package, offering a continuous current rating of 32 amps. This makes it suitable for a wide range of applications, from high-power to low-power systems.

The working principle of the SH8K32TB1 is based on using Metal-Oxide Semiconductor (MOS) technology. MOS technology is a type of technology that utilizes metal and an insulator, in this instance silicon dioxide (SiO2), to create a junction between metal and semiconductor, forming the basis of modern transistors. The metal gate is used to control the flow of electrons between the source and drain, while the insulator prevents direct electrical contact, allowing precise control of current and voltage.

The SH8K32TB1 utilizes an N-channel MOSFET, which functions by allowing free flow of electrons when a positive voltage is applied to the gate. The FETs in the array are connected in parallel, allowing the device to handle both high and low power signals. This is done by connecting the gates of the FETs together so that one gate controls the channel of all FETs in the array.

The SH8K32TB1 is used in a variety of applications, such as high-power switching, lighting, battery control, and automotive systems. It is well-suited for high-efficiency, low-noise applications due to its low-on resistance and high-output current capabilities. In addition, its robust package design and high-speed switching capabilities make it an ideal choice for a range of high-temperature and high-frequency applications.

Overall, the SH8K32TB1 is a high-performance device that can improve system efficiency and performance due to its integrated design and superior features. The versatility of the device makes it suitable for a variety of applications, ranging from low-power to high-power systems. Additionally, its robust design and high-speed switching capabilities make it an ideal choice for a variety of applications, including automotive and lighting systems.

The specific data is subject to PDF, and the above content is for reference

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